TechInsights ALD/ALE Process in Commercially Available Logic Devices

2018 saw the introduction of a new generation of logic products featuring finFET transistors headlined by Intel with their 10 nm generation microprocessor, followed by TSMC and Samsung towards the end of the year with their 7 nm node devices. 

 

This presentation on the Atomic Layer Deposition/Atomic Layer Etching (ALD/ALE) process examines some of the different structures we have seen during the evolution of these logic technologies, in particular the latest 7 nm and 10 nm devices. We also discuss several historical applications of ALD/ALE technology that have been observed through reverse engineering, and we highlight the importance of ALD/ALE process in advanced logic devices. In many cases, the technology could not have advanced without the implementation of ALD/ALE. 

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