Wednesday, August 15, 2018

NaMLab present advances in ferroelectric HZO layers for low-power electronics

Recent results by NaMLab in Dresden Germanz, show  a strong potential for further aggressive thickness reduction of HZO layers for low-power electronics.
Genuinely ferroelectric sub-1-volt-switchable nanodomains in HfxZr(1-x)O2 ultrathin capacitors

Igor Stolichnov, Matteo Cavalieri, Enrico Colla, Tony Schenk, Terence Mittmann, Thomas Mikolajick, Uwe Schroeder, and Adrian M. Ionescu

ACS Appl. Mater. Interfaces, Just Accepted Manuscript
DOI: 10.1021/acsami.8b07988
Publication Date (Web): August 14, 2018

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