Strem launch a volatile manganese precursor for ALD & CVD

Manganese Amidinate Offers High-Quality, Uniform Thin Mn Films

Thin films of transition metals and their oxides are crucial ingredients in advanced material applications such as magnetic information storage, microelectronics and catalysis.  ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) are techniques modified to deliver uniform thin films for these applications. Bis(N,N'-di-i-propylpentylamidinato)manganese(II), 25-0230, is a new manganese precursor offered by Strem Chemicals for such applications.

 

25-0230 melts at 70 ^oC and has a highly selective reactivity with molecular hydrogen or water vapor affording fine films of metal or metal oxides.  The high thermal stability (>200^oC) and volatility (vapor pressure at 90^oC is 50 mTorr) make it a great candidate for ALD and CVD applications. This amidinate precursor is highly reactive, affording the deposition of manganese at reasonable rates in the growth of Mn(0) films. This reactive precursor is far superior to the carbonyl analogs currently available.

Full information can be found at the Strem product blog page (LINK)