Wednesday, December 10, 2014

Intel shows porous silicon 3.5 mF/cm2 super caps using ALD TiN

As reported by Chip Works Blog: For those interested in energy storage, Intel have fabricated porous silicon capacitors (8.2) that can potentially be integrated on-die or onto solar cells, taking advantage of the extreme conformal deposition capabilities of atomic-layer deposition (ALD). The image below shows a top-down view of the porous silicon before and after ALD TiN deposition; the wall of the pore walls get thicker, but the pore structure doesn’t change. Capacitances of up to 3 milliFarads/cm2 are claimed.

Session 8: Sensors, MEMS, and BioMEMS– NEMS and Energy Harvesters

Monday, December 15, 1:30 p.m.
Imperial Ballroom B
Co-Chairs: Rainer Minixhofer, AMS
Kea-Tiong Tang, National Tsing Hua University
2:00 p.m.
8.2 Integrated On-Chip Energy Storage Using Porous-Silicon Electrochemical Capacitors, D.S. Gardner, C.W. Holzwarth, Y. Liu, S.B. Clendenning, W. Jin, B.K. Moon, C.L. Pint, Z. Chen, E. Hannah, R. Chen, C.P. Wang, C. Chen*, E. Mäkilä**, and J.L. Gustafson, Intel Corp., *Florida Int'l Univ., **University of Turku
Capacitors are favored over batteries for energy harvesting and certain energy storage applications. Electrochemical capacitors based on porous-silicon nano¬structures were synthesized and passivated using either ALD TiN or CVD carbon. Highly stable high density capacitances are achieved and are fabricated using silicon process methods with the potential of on-die integration.

8.2 Fig 5_Gardner

No comments:

Post a Comment