Monday, September 21, 2020

Hafnium (IV) oxide obtained by atomic layer deposition (ALD) technology promotes early osteogenesis

ALD HfO2 is very versatile, first, it saved the whole semiconductor industry (HKMG Technology) and now it has been shown that an ALD HfO2 layer can be applied to cover the surface of metallic biomaterials in order to enhance the healing process of osteoporotic bone fracture. The ALD HfO2 was deposited using the famous Veeco CNT Savannah reactor.

 

 Veeco CNT Savannah ALD reactor (LINK)

 

Hafnium (IV) oxide obtained by atomic layer deposition (ALD) technology promotes early osteogenesis 

A. Seweryn, M. Alicka, A. Fal, K. Kornicka-Garbowska, K. Lawniczak-Jablonska, M. Ozga, P. Kuzmiuk, M. Godlewski & K. Marycz Journal of Nanobiotechnology volume 18, Article number: 132 (2020) 

https://jnanobiotechnology.biomedcentral.com/articles/10.1186/s12951-020-00692-5

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