Showing posts with label MBE - molecular beam epitaxy. Show all posts
Showing posts with label MBE - molecular beam epitaxy. Show all posts

Monday, September 17, 2018

Veeco GEN10 Automated MBE Cluster System Wins Max Planck Institute Tender, Supporting Research of Oxide-Nitride Layer Structures

Prestigious Research Institute Cited Veeco’s Expertise in MBE and the High Reliability and Customization of the GEN10™ as Key Factors in its Decision

[Veeco, LINK] PLAINVIEW, N.Y., August 14, 2018—Veeco Instruments Inc. (NASDAQ: VECO) today announced that a dual chamber GEN10™ automated molecular beam epitaxy (MBE) cluster system won the tender offer by the Max Planck Institute of Microstructure Physics, Halle (Saale), Germany (MPI-MSP) to support world-class research on complex oxides. Demand for oxide-nitride layer structures has increased due to their enormous potential in enabling next-generation energy-efficient nano-devices and advanced data storage. The department of Nano-systems from Ions, Spins and Electrons (NISE) at the MPI-MSP will leverage Veeco’s MBE technology to expand research and develop innovative applications. 

Veeco's GENxplor R&D MBE System (Veeco.com)
“Our team is highly interested in exploring the properties of atomically engineered oxide-nitride layer structures especially because of their extraordinary properties but also for their potential in paving the way to novel energy-efficient nano-devices,” said Stuart Parkin, Director of the NISE Department at the MPI-MSP and Alexander von Humboldt Professor, Martin Luther University Halle-Wittenberg, Halle. “Veeco’s reputation and expertise in MBE combined with the GEN10’s high reliability, throughput, customization and automation capabilities will help support our research into novel materials.”

This win at MPI marks the first time Veeco has provided a fully integrated solution for a concentrated ozone source. The GEN10 allows for up to three configurable, material-specific growth modules, enabling high system utilization and allowing multiple researchers use the system at the same time to perform unattended growth. By expanding its reach in the R&D sector worldwide, Veeco is leading the way in helping grow complex oxide structures.

“As our MBE systems continue to expand their footprint in the global R&D space, we are honored that Veeco’s GEN10 MBE system was selected by the highly respected Max Planck Institute of Microstructure Physics in Halle,” noted Gerry Blumenstock, vice president and general manager of MBE and ALD products at Veeco. “We are pleased with the confidence Dr. Parkin and his team placed in our MBE expertise and we look forward to supporting the MPI-MSP as it continues to lead R&D exploration and applications for complex oxides.”

Tuesday, August 14, 2018

VEECO GEN10 AUTOMATED MBE CLUSTER SYSTEM WINS MAX PLANCK INSTITUTE TENDER, SUPPORTING RESEARCH OF OXIDE-NITRIDE LAYER STRUCTURES

PLAINVIEW, N.Y., August 14, 2018Veeco Instruments Inc. (NASDAQ: VECO) today announced that a dual chamber GEN10™ automated molecular beam epitaxy (MBE) cluster system won the tender offer by the Max Planck Institute of Microstructure Physics, Halle (Saale), Germany (MPI-MSP) to support world-class research on complex oxides. Demand for oxide-nitride layer structures has increased due to their enormous potential in enabling next-generation energy-efficient nano-devices and advanced data storage. The department of Nano-systems from Ions, Spins and Electrons (NISE) at the MPI-MSP will leverage Veeco’s MBE technology to expand research and develop innovative applications.


“Our team is highly interested in exploring the properties of atomically engineered oxide-nitride layer structures especially because of their extraordinary properties but also for their potential in paving the way to novel energy-efficient nano-devices,” said Stuart Parkin, Director of the NISE Department at the MPI-MSP and Alexander von Humboldt Professor, Martin Luther University Halle-Wittenberg, Halle. “Veeco’s reputation and expertise in MBE combined with the GEN10’s high reliability, throughput, customization and automation capabilities will help support our research into novel materials.”
This win at MPI marks the first time Veeco has provided a fully integrated solution for a concentrated ozone source. The GEN10 allows for up to three configurable, material-specific growth modules, enabling high system utilization and allowing multiple researchers use the system at the same time to perform unattended growth. By expanding its reach in the R&D sector worldwide, Veeco is leading the way in helping grow complex oxide structures.
“As our MBE systems continue to expand their footprint in the global R&D space, we are honored that Veeco’s GEN10 MBE system was selected by the highly respected Max Planck Institute of Microstructure Physics in Halle,” noted Gerry Blumenstock, vice president and general manager of MBE and ALD products at Veeco. “We are pleased with the confidence Dr. Parkin and his team placed in our MBE expertise and we look forward to supporting the MPI-MSP as it continues to lead R&D exploration and applications for complex oxides.”
About Veeco
Veeco (NASDAQ: VECO) is a leading manufacturer of innovative semiconductor process equipment. Our proven MOCVD, lithography, laser annealing, ion beam and single wafer etch & clean technologies play an integral role in producing LEDs for solid-state lighting and displays, and in the fabrication of advanced semiconductor devices. With equipment designed to maximize performance, yield and cost of ownership, Veeco holds technology leadership positions in all these served markets. To learn more about Veeco's innovative equipment and services, visit
www.veeco.com.

Wednesday, March 18, 2015

European Researchers grow InGaN layers directly on Silicon by PA-MBE

Researchers from Spain, Germany and Italy grows InGaN layers grown directly on Silicon by PA-MBE.

Pavel Aseev, Paul E. D. Soto Rodriguez, Víctor J. Gómez, Naveed ul Hassan Alvi1, José M. Mánuel, Francisco M. Morales, Juan J. Jiménez, Rafael García, Alexander Senichev, Christoph Lienau, Enrique Calleja and Richard Nötzel
Appl. Phys. Lett. 106, 072102 (2015); http://dx.doi.org/10.1063/1.4909515

The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.


(a) HRTEM image of the In0.73Ga0.27N/SiNx/Si interface and (b) HAADF image of the InGaN layer, both taken along the [11–20] III-N zone axis. (c) Corresponding SEM image.

Tuesday, August 19, 2014

US-Korean Joint Research Developing New Material Using Atomic Layer-manipulating Tech (MBE)

As reported by Business Korea: A Korean research team has successfully synthesized a new material that can be used in the development of materials in the energy area such as fuel cells, thermal conductors, and superconductors. The Korea Atomic Energy Research Institute (KAERI) announced on August 18 that a Korean research team led by Lee Joon-hyeok, a senior researcher at KAERI, and a U.S. counterpart was able to improve a method for molecular beam deposition that makes nanometer-scale film by stacking up atomic layers one by one.
 
The team also succeeded in synthesizing thin films made of layers of monocrystal lanthanum nickel oxides (Lan+1NinO3n+1 oxides). Since lanthanum nickel oxides have excellent ion conductivity and can respond to catalysts very well, they are actively studied as a material in the energy field like an electrode or a catalyst. In the past, it was difficult to conduct pure research on their characteristics and develop a new material by synthesizing them with other kinds of thin films, because the arrangement of existing polycrystalline lanthanum nickel oxides was irregular. Moreover, the bigger the size, the less regular the material. The joint research team observed in real-time the process where atomic layers of the oxides were piled up, using Oxide Molecular Beam Epitaxy (Oxide MBE) installed in the Advanced Photon Source (APS) Synchrotron at Argonne National Laboratory. During the process, the team discovered the phenomenon of voluntary rearrangement between layers, which means that the order of some atomic layers was not fixed, but reversed instead. By applying this phenomenon, the team manipulated the order that atomic layers of lanthanum oxides and nickel oxides were piled up, and was able to synthesize thin films made of layered compound-type monocrystal lanthanum nickel oxides as a result.
 

a–e, Optimized structures and relative energies of different stackings of two (a,b) or three (c–e) ​SrO and one ​TiO2 layer on a ​TiO2-terminated ​SrTiO3 substrate. (Nature Materials (2014)DOI:doi:10.1038/nmat4039)
 
KAERI is planning to apply the research findings in the development of new materials, such as a change in layer-structure materials and the measurement of material properties, using a neutron reflectometer in the Cold Neutron Research Facility (CNRF). The research findings were first published online on August 3 by Nature Materials.
 
 

Tuesday, August 5, 2014

Cornell - The perfect atom sandwich requires an extra layer

As reported by Cornell: Cornell researchers have discovered that sometimes, layer-by-layer atomic assembly – a powerful technology capable of making new materials for electronics – requires some unconventional “sandwich making” techniques.

The team, led by thin-films expert Darrell Schlom, the Herbert Fisk Johnson Professor of Industrial Chemistry in the Department of Materials Science and Engineering, describes the trick of growing perfect films of oxides called Ruddlesden-Poppers in Nature Communications Aug. 4.
 
The left figure demonstrates why the first double layer of strontium oxide is missing when growing a Ruddlesden-Popper oxide thin film. Titanium atoms (yellow) preferentially bond with oxygen atoms (gray) and sit at the center of a complete octahedron, making it energetically more favorable for titanium to switch positions with the topmost strontium oxide layer (red). Because of this, the first double layer of strontium oxide is always missing, and the extra layer rides the surface. By depositing an extra strontium oxide layer first, the desired first double layer is obtained. (source : Cornell)

These oxides are widely studied for their electronically enticing properties, among them superconductivity, magnetoresistance and ferromagnetism. Their layered structure is like a double Big Mac with alternating double and single layers of meat patties – strontium oxide – and bread – titanium oxide – in the case of the Ruddlesden-Poppers studied.

“Our dream is to control these materials with atomic precision,” Schlom said. “We think that controlling interfaces between Ruddlesden-Poppers will lead to exotic and potentially useful, emergent properties.”

Schlom’s lab makes novel thin films with molecular beam epitaxy, a deposition method that controls the order in which atom-thick layers are assembled layer-by-layer, which Schlom likens to precision spray-painting with atoms.
Full story here and Nature abstract below.
 
Atomically precise interfaces from non-stoichiometric deposition
Y. F. Nie, Y. Zhu, C.-H. Lee, L. F. Kourkoutis, J. A. Mundy, J. Junquera, Ph. Ghosez, D. J. Baek, S. Sung, X. X. Xi, K. M. Shen, D. A. Muller & D. G. Schlom   
Nature Communications 5, Article number: 4530, 04 August 2014
     
Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One might assume that atomically precise interfaces result from stoichiometric growth. Here we show that the most precise control is, however, obtained by using deliberate and specific non-stoichiometric growth conditions. For the precise growth of Srn+1TinOn+1 Ruddlesden–Popper (RP) phases, stoichiometric deposition leads to the loss of the first RP rock-salt double layer, but growing with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the subsurface RP structure. Our results dramatically expand the materials that can be prepared in epitaxial heterostructures with precise interface control—from just the n=∞ end members (perovskites) to the entire RP homologous series—enabling the exploration of novel quantum phenomena at a richer variety of oxide interfaces.