Saturday, August 9, 2014

The 3rd Symposium of Atomic Layer Deposition at SEMICON Europa October 7th 2014

Symposium of the ALD-Lab

Workshop on Atomic Layer Deposition

Date: 7 October 2014
Time: 09:00 - 13:00
Location: Room Le Bans, ALPEXPO
 
Organized by:
 
The termination of Moore’s law is often associated with a lack of technological control at atomic dimensions. However the innovative utilization of self limiting heterogeneous chemical reactions enabled the introduction of a new deposition technology into the microelectronic manufacturing process within the last decade, which is generally capable to control film growth within atomic layers on any wafer size and on any topography.
Although the scientific background of ALD goes far back in history ALD can still be considered as an emerging technology. It required challenges like deposition of atomic thin work function layers or novel dielectrics in High-k MG structures to realize the advantage of precise thickness control on large substrates against the low deposition rate that is inherent to ALD.
Progress in ALD is associated with tools, but even more with specifically designed precursors which need to be applied at optimum conditions of the gas feed system, the process chamber and the substrate condition. Our workshop, which is organized by the “ALD Lab Dresden” wants to stimulate discussions between developers of tools, consumables, as well as applicants of this exciting technology.
 
 

Agenda

 09:00Welcome and the latest ALD Research at TU Dresden
“Fundamental insight into ALD processing by in-situ observation”
 Johan W. Bartha, Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden, Germany
 
 09:25Development of innovative ALD materials and tools for high density 3D integrated capacitors
Malte Czernohorsky, Fraunhofer IPMS-CNT, Dresden, Germany
 
 09:50Recent Developments in Heteroleptic Chemistries for Next Generation thin films PEALD/ALD
Jean Marc Girard and Nicolas Blasco, Air Liquide Electronics, Paris/Grenoble, France
 
 10:15High permittivity dielectrics for CMOS FDSOI Gate first technologiess
Mickael Gros-Jean, ST Microelectronics, Grenoble, France
 
 10:40ALD deposited ferroelectric HfO2
Stefan Slesazeck, NaMLab, Dresden, Germany
 
 11:05ALD of Metals and Metal Oxides for Advanced Interconnect and Sensor Technology: In-Situ Investigations for the ALD of Copper
Stefan E. Schulz, Fraunhofer ENAS, Chenitz, Germany
 
 11:30Plasma-assisted ALD of Silicon Nitride and Gallium Nitride
Harm C. M. Knoops, Oxford Instruments
 
 11:55Real Time True Surface Monitoring for ALD Processes
Hassan Gargouri, Sentech, Berlin, Germany
 
 12:20Conversation / Networking
 
 13:00Termination of the workshop
 

Registration

No pre-registration required but you must register as a visitor, in order to gain access to the venue: