Thursday, August 7, 2014

Lam Research Atomic Layer Etch (ALEt) technology in beta-site evaluations

According to a rescent blog post by Ed Korczynski, Lam Research Atomic-Layer Etch (ALE) technology are in beta-site evaluations.

"Atomic-Layer Etch (ALE) technology from Lam Research Corp. is now in beta-site evaluations with IC fabrication (fab) customers pursuing next generation manufacturing capabilities. So said Dr. David Hemker, Lam’s senior vice president and chief technical officer, in an exclusive interview with Solid State Technology and SemiMD during this year’s SEMICON West trade-show in San Francisco. Hemker discussed the reasons why ALE is now under evaluation as a critically enabling technology for next generation IC manufacturing, and forecast widespread adoption in the industry by 2017."
 
 
 
Commonality in the need for ALD and ALE process technologies when IC device dimensions scale to atomic levels.

"As detailed in the feature article “Moving atomic layer etch from lab to fab” in last December’s issue of Solid State Technology, ALE can be plasma enhanced with minor modifications to a continuous plasma etch chamber. The lab aspects including the science behind the process were discussed in a TechXPOT during SEMICON West this year in a presentation titled “Plasma Etch in the Era of Atomic Scale Fidelity” by Lam’s Thorsten Lill based on work done in collaboration with KU Leuven and imec. In that presentation, Lill reminded the attendees that the process has been explored in labs under a wide variety of names: ALET, atomistic etching, digital etch, layer-by-layer etch, PALE, PE-ALE, single layer etch, and thin layer etching."
 
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