ALD / CVD Precursor Report 2016

ALD/CVD High K and Metal Precursors - MAY 2016

For Semiconductor Device Process Applications

A TECHCET Critical Materials Report™

Prepared by J. Sundqvist, Ph.D.
With contributions from K. Holland, Ph.D.
Reviewed and Edited by L. Shon-Roy
TECHCET CA LLC
PO Box 3056
Rancho Santa Fe, CA 92067
www.TECHCET.com
info@TECHCET.com
+1-480-382-8336

The  ALD/CVD High K and Metal Precursors report provides information on the applications and markets associated with front end and back end of line precursors used to produce high dielectric constant (K) dielectrics and atomic layer deposition metal oxides and nitrides.


The combined revenues for all high-k and metal precursors (inorganic and organic) used for front end of line (pre-interconnect) and back end of line (interconnects) device fabrication of logic and memory is estimated to have totaled over $258M in 2015 and could approach $399M by 2020 (a CAGR of 9.11%).

The combined revenues for all high-k and metal precursors (inorganic and organic) used for front end of line (pre-interconnect) and back end of line (interconnects) device fabrication of logic and memory is estimated to have totaled over $258M in 2015 and could approach $399M by 2020 (a CAGR of 9.11%). This includes the revenues for all high-κ metal precursors for metal oxides (Al, Zr, Hf, Nb, Ta & Sr - inorganic and organic) used for logic and memory, estimated to have been over $132M in 2015. More details can be found in TECHCET's 2016 ALD & High K Metal Precursors Report.

In the report, TECHCET's Sr. Analyst, Jonas Sundqvist, Ph.D., provides a great technology review of the use of ALD/CVD materials in both Memory and Logic devices; including many pictures of current device technology in relationship to materials AND equipment platforms. This, in addition to detailed information on the Precursor Business & Supply Chain, make this an extremely valuable Critical Materials Reports.
Jonas Sundqvist, Ph. D. – Techcet’s Sr. Technology Analyst & Senior Scientist at Fraunhofer IKTS, is our expert in ALD and CVD precursors, and related technologies. His work experience includes Lab Manager of Lund Nano Lab, Sweden, Group Leader of the High-k Devices Group at Fraunhofer’s Center Nanoelectronic Technologies (CNT), which included work for GLOBALFOUNDRIES Fab1 28 nm. While there, he founded the ALD Lab Dresden together with TU Dresden. At Infineon Memory Development Centre (MDC), Jonas developed high-k and metal nitride ALD processes, and at Qimonda, he was a critical component of their Materials Management Team focused on the ALD / CVD Precursors Supply Chain. In addition, Jonas is the founder of BALD Engineering, an independent Blog and Networking Platform for ALD. Jonas has a PhD in inorganic chemistry from Uppsala University, Sweden, where he specialized in ALD and CVD metal oxide process development.

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