Saturday, August 15, 2015

Nantero closes additional funding this summer for NRAM and adds ex TSMC Executive to the Board

I have noticed that Carbon Nanotube integration into semiconductor processing as an active device or sensor material has moved into a more mature phase lately. One example is the company Nantero who earlier this summer announced closing a $31.5 million Series E financing round from new and existing investors now adds Previous TSMC Executive Dr. Shang-Yi Chiang to its Advisory Board

According to the press relase Dr. Chiang was previously an Executive Vice President, Co-Chief Operating Officer and Senior Vice President of R&D at TSMC before announcing his retirement in October 2013. 

NRAM is based on forming a film of Carbon Nanotubes (CNT) that are deposited onto a standard silicon substrate that contains an underlying cell select device and array lines (typically transistors or diodes) that interface the NRAM switch. The NRAM acts as a resistive non-volatile random access memory NVRAM and can be placed in two or more resistive modes depending on the resistive state of the CNT fabric. When the CNTs are not in contact the resistance state of the fabric is high and represents a “0” state (see Figure below). When the CNTs are brought into contact, the resistance state of the fabric is low and represents a “1” state. (

“Nantero continues to attract the industry’s brightest and most innovative minds both internally and on an advisory basis,” said Greg Schmergel, Co-Founder, CEO and President of Nantero. “This added expertise will be instrumental in helping the company deliver a new generation of memory with the unique properties of DRAM-like speed, nonvolatility, and ultra-high-densities, for both standalone and embedded use.”

Additional information at the  tells us: NRAM can enable a variety of exciting new features and products in both consumer and enterprise electronics. This new super-fast, ultra-high density memory can replace both DRAM and flash in a single chip, or enable new applications as a storage class memory, while also delivering the low power, high speed, reliability, and endurance needed to drive the next wave of electronics innovation.

  • NRAM Advantages: Extremely Low Power, Super-Fast, High Density, High Endurance
  • Limitless Scalability: Can Scale Below 5 nm to Enable Terabits of Memory in the Future
  • Proven Technology: Successfully Used in Mass Production CMOS Fabs for Many Years
  • Exciting Future Products: Virtual Screens, Next-Generation Enterprise Systems, Rolled-up Tablets, Instant-On Laptops, 3D Video Phones and other products needing huge amounts of fast memory
Here is also a video where the founders of Nantero tells us more about the revolutionary emerging memory technology they are commercializing - claiming scaling down to 5 nm and "unlimited storage capacity" for our future electronic gizmos.

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