Behold the final Program for EFDS ALD for Industry, Berlin 19-20 March

Ladies and Gentlemen, behold the final Program for EFDS ALD for Industry, Berlin 19-20 March. 2 intensive days with a great show! 

Program_ALD

The 4th-annual Critical Materials Council (CMC) Conference April 25-26, 2019

The 4th-annual Critical Materials Council (CMC) Conference will be held April 25-26, 2019 at the Saratoga Hotel and Casino in Saratoga Springs, New York. The public conference follows private CMC Fabs face-to-face meetings and Associate Members joint sessions April 23-24, at GlobalFoundries in Malta, New York.

https://cmcfabs.org/agenda/

Ultra-high on-chip optical gain in ALD erbium-based hybrid slot waveguides

Reliable on-chip optical amplifiers and light sources can enable integration of active functionalities on silicon based platforms.

Previously lasers integrated on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy (MBE). These methods are however not that cost-effective in high volume manufacturing.

Now rearchers at Aalto University and Université Paris-Sud has now managed to significantly improve within chip data transmission using ALD Er:Al2O3 - a CMOS-compatible and scalable atomic-layer deposition process.

"The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 ± 7.31 dB/cm and at least 52.4 ± 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon." [Nature Communications 2019, LINK]

Extended deadline for ASD 2019 Workshop

We are pleased to announce that the deadline for ASD abstract submission has been extended until Sunday 10 February. This means you have an extra ten days to finalize your abstracts and submit them at: abstract@asd2019-workshop.org

 

 

The workshop will feature the following invited speakers:

Rudy J. Wojtecki (IBM, USA), Katie Nardi (LAM Research, USA), Kanda Tapily (TEL, USA), Chi-I Lang (AMAT, USA), John Tolle (ASM, USA), Han-Bo-Ram Lee (Incheon National University), Gregory Parsons (NC State University, USA), Matthias Minjauw (University of Gent, Belgium), Necmi Biyikli (University of Connecticut, USA), Mohamed Saib (IMEC, Belgium), Efrain A. Sanchez (IMEC, Belgium), John G. Ekerdt (University of Texas, USA).

The workshop will cover a wide range of topics, including the following:

Area selective epitaxy and area selective chemical vapor deposition: processes and mechanisms, defects control

Intrinsic selectivity of ALD processes: nucleation and interface studies, chemical selectivity in surface reactions, competitive adsorption, precursors design, modeling of surface reactions

Methods for area selective activation / deactivation: use of inhibitors (self-assembled monolayers, polymers), plasma-/beam-induced activation

Processes and mechanisms for area selective atomic layer deposition: deposition of metals or dielectrics, thermal/plasma enhanced ALD, 3D or patterned substrates, substrates preparation, sequential deposition/etching,

Metrology and defects control: surface characterization techniques, selective etching of defects

Applications of area selective deposition: semiconductor industry (integration needs of device makers, solutions proposed by the equipment makers), catalysis, energy generation and storage, etc.


On behalf of the organizing committee, it will be our pleasure to welcome you in Leuven.

Andrea Illiberi Program Chair of the 4th ASD workshop

Low temperature ALD of Rutheium using H2O as co-reactant

For those of you who were not surprised when Helsinki University published their Ru ALD processing using air as co-reactant please behold - Ruthenium ALD using H2O as co-reactant!

Self-catalyzed, Low-temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-valent, Ru(DMBD)(CO)3 and Water

 
Zhengning Gao, Duy Le, Asim Khaniya, Charles L. Dezelah, Jacob Woodruff, Ravindra K. Kanjolia, William E Kaden, Talat S. Rahman, and Parag Banerjee
Chem. Mater., Just Accepted Manuscript
DOI: 10.1021/acs.chemmater.8b04456

Ruthenium (Ru) films are deposited using atomic layer deposition (ALD), promoted by a self-catalytic reaction mechanism. Using zero-valent, η4-2,3-dimethylbutadiene Ruthenium tricarbonyl (Ru(DMBD)(CO)3) and H2O, Ru films are deposited at the rate of 0.1 nm/cycle. The temperature for steady deposition lies between 160 ○C and 210 ○C. Film structure and composition is confirmed via x-ray diffraction, high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The room temperature electrical resistivity of 10 nm Ru films is found to be 39 µΩ.cm. In situ quadrupole mass spectrometry and ab initio density functional theory are used to understand ALD surface reactions. The ligand, dimethylbutadiene dissociatively desorbs on the surface. On the other hand, the carbonyl ligand is catalyzed by the Ru center. This leads to the water gas shift reaction, forming CO2 and H2. Modulating deposition temperature affects these two ligand dissociation reactions. This in turn affects nucleation, growth and hence, Ru film properties. Self-catalyzed reactions provide a pathway for low temperature ALD with milder co-reactants.