Photoshow : ALD Lab Dresden Symposium at SEMICON Europa 2015

SEMICON Europa this year has turned out to be a major event for ALD and exciting nanoelectronic materials research. Here are photos taken from The ALD Day October 6th, 2015!

More details on this event you can find here : http://baldengineering.blogspot.de/2015/10/ald-ale-and-exciting-nanoelectronic.html

We are already looking forward to SEMICON Europa 2016 in Grenoble, France and to co-chair an ALD Sympoium there yet one more time!

SEMICON Europa ALD 2014, Grenoble : http://baldengineering.blogspot.de/2014/10/voila-3rd-ald-lab-dresden-symposium-at.html

Columbus, Tuesday Oct 6, 13:45, ALD / ALE Sympoium of The ALD Lab Dresden, Messe Dreaden, Germany

Waiting for the ALD Storm!

Welcome

Prof. Johann W. Bartha, TU Dresden

In situ monitoring of Atomic Layer Deposition in porous materials

Martin Knaut, TU Dresden

Passivation of MEMS by Atomic Layer Deposition

Matthias Schwille, Robert Bosch

Symposium is full - please help me throw out a PVD guy

Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition

Dileep Dhakal, TU Chemnitz/FhG ENAS

High-k dielectrics by ALD for BEOL compatible MIM

Wenke Weinreich, FhG IPMS-CNT

ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials

Mario Krug, FhG IKTS

ALD for solar cell application

Ingo Dirnstorfer, NaMLab

Plasma enhanced ALD process for TiO2- and WO3- films

Alexander Strobel, FH Zwickau

Why do we need Atomic Layer Etching

Jonas Sundqvist, Lund University/TU Dresden

Spatial Atomic Layer Deposition and Atomic Layer Etching

Prof. Fred Roozeboom, TU Eindhoven / TNO Eindhoven

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

Harm Knoops, Oxford Instruments/TU Eindhoven

Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes

Stephan Wege, Plasway

Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation

Jacques Kools, Encapsulix

Monolayer controlled deposition of 2D transition metal dichalcogenides on large area substrates

Annelies Delabie, Imec

Selective Deposition as Enabler for Shrinking Device Dimensions

Suvi Haukka, Executive Scientist, ASM Microchemistry Ltd.

TECHCET -Dielectric Precursors – NEW – Just Released!

The Dielectric Precursors Report provide detailed market, supply chain and technology trend information required for anyone developing strategy for their business, be it a materials supplier or semiconductor chip manufacturer. Precursor types include, gapfill, ILD, low K, and multi-patterning.

Click here for full table of contents:

http://techcet.com/wp-content/uploads/2015/09/DielectricPrecursorsTOC2015preprint.pdf

Workshop Simulation of chemistry-driven growth phenomena for metastable materials

CECAM/Psi-k/HERALD Workshop
Simulation of chemistry-driven growth phenomena for metastable materials

The controlled growth of thin films based on metastable materials by chemistry-driven processes is of high technological importance for topics like semiconductor devices or optical coatings. Computational modelling of this inherently multiscale process is crucial for an atomistic understanding and enables a decoupling and separate optimization of the growth-determining factors of non-equilibrium materials. This workshop will result in a joint effort by experts from different modelling communities covering the necessary length and time scales.

Main Page : http://www.staff.uni-marburg.de/~simgrow/

The workshop will be held at

Schloss Rauischholzhausen

nearby Marburg in Germany from November 08-11, 2015.

 

Organizers

CECAM		Psi-k		HERALD

Sponsors

GRK 1782		ESF	Dock/Chemicals

ALD, ALE and exciting nanoelectronic materials research at SEMICON Europa, 6-8 October, Dresden

SEMICON Europa this year has turned out to be a major event for ALD and exciting nanoelectronic materials research. Here are I have have highlighted some of the events with respect to this.

Columbus, Tuesday Oct 6, 13:45, ALD / ALE Sympoium of The ALD Lab Dresden

09:00	Welcome	Organized by: Supported by:
	Prof. Johann W. Bartha, TU Dresden
09:15	In situ monitoring of Atomic Layer Deposition in porous materials
	Martin Knaut, TU Dresden
09:40	Passivation of MEMS by Atomic Layer Deposition
	Matthias Schwille, Robert Bosch
10:05	Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition
	Dileep Dhakal, TU Chemnitz/FhG ENAS
10:30	High-k dielectrics by ALD for BEOL compatible MIM
	Wenke Weinreich, FhG IPMS-CNT
10:55	ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials
	Mario Krug, FhG IKTS
11:20	ALD for solar cell application
	Ingo Dirnstorfer, NaMLab
11:45	Plasma enhanced ALD process for TiO2- and WO3- films
	Alexander Strobel, FH Zwickau
12:10	Lunch Break (Conversation, Networking, Finger food)
13:00	Why do we need Atomic Layer Etching
	Jonas Sundqvist, Lund University/TU Dresden
13:25	Spatial Atomic Layer Deposition and Atomic Layer Etching
	Prof. Fred Roozeboom, TU Eindhoven / TNO Eindhoven
13:50	Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
	Harm Knoops, Oxford Instruments/TU Eindhoven
14:15	Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes
	Stephan Wege, Plasway
14:40	Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation
	Jacques Kools, Encapsulix
15:05	Closing Remarks / Wrap Up
	Prof. Johann W. Bartha, TU Dresden
15:10	End

TECH ARENA, Tuesday Oct 6, 13:45- Emerging Research, Materials and Processes Session

Potential Solutions to Semiconductor Industry’s Challenges

Chair	Hessel Sprey, Manager cooperative programs and university contacts, ASM International
13:45	Introduction
13:50	Next Generation Ferroelectric Field Effect Transistors enabled by Ferroelectric Hafnium Oxide
	Thomas Mikolajick, scientific director, NaMLab Gmbh / TU Dresden
14:15	Large diameter GaN-on-Si epiwafers for Power Switching and RF Power electronics with enhanced efficiency
	Marianne Germain, CEO, EpiGaN nv
14:40	Prospects of Emerging 2D Transition Metal Films for Applications in Electronics
	Georg Duesberg, PI, CRANN, Trinity College Dublin
15:05	Monolayer controlled deposition of 2D transition metal dichalcogenides on large area substrates
	Annelies Delabie, Professor, Imec
15:30	Selective Deposition as Enabler for Shrinking Device Dimensions
	Suvi Haukka, Executive Scientist, ASM Microchemistry Ltd.
15:55	MOFs as Low-k Candidates for Future Technology Nodes
	Christof Wöll, Director, KIT
16:20	Spin-based nanoelectronic devices for mobile Informaion-Communication Technology
	Alina Deac, Group Leader, Helmholtz-Zentrum Dresden - Rossendorf
16:55	Closing Remarks

ARENA 2: Tuesday, 6 October 2015, Best of Advanced Process Control (APC)

12:25   In-Situ process control for Atomic Layer Deposition (ALD)
Johann W. Bartha, TU Dresden

IBM Research showcases Carbon Nanotubes (CNT) down to 9nm contact

Here is A breakthrough news from IBM Watson Research Center on integrating CNTs down to 9nm contacts. This section from a recent interview with one of the researchers, Shu-Jen Han, behind this work taken from The IBM Research Blog:

Silicon has offered many advantages as a transistor material for the last half century. One biggest perhaps was that it forms a great gate dielectric – SiO2. It also comes with a very pure and high quality substrate, silicon wafers, to start with. And over time we’ve used other materials and device structures to improve its abilities, such as transitioning to high-k metal gate transistors and FinFETs.

On the other hand, for carbonnanotubes, many material issues have to be solved to obtain similar high-quality carbon nanotube wafers for device fabrication. We can’t switch to an entirely new material over night, but silicon is reaching its scaling limits.

 

 

Dr. Qing Cao and my other teammates at [the IBM Watson Research Center] developed a way, at the atomic level, to weld - or bond – the metal molybdenum to the carbon nanotubes' ends, forming carbide. Previously, we could only place a metal directly on top of the entire nanotube. The resistance was too great to use the transistor once we reached about 20 nm. But welding the metal at the nanotubes' ends, or end-bonded contacts, is a unique feature for carbon nanotubes due to its 1-D structure, and reduced the resistance down to 9 nm contacts. Key to the breakthrough was shrinking the size of the contacts without increasing electrical resistance, which impedes performance. Until now, decreasing the size of device contacts caused a commensurate drop in performance.

For full details on this breakthrough research please see a recently published article in Science:

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Qing Cao, Shu-Jen Han, Jerry Tersoff, Aaron D. Franklin, Yu Zhu, Zhen Zhang, George S. Tulevski, Jianshi Tang, Wilfried Haensch

Science 2 October 2015:
Vol. 350 no. 6256 pp. 68-72
DOI: 10.1126/science.aac8006 

Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to size-independent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabricated with a sub–10-nanometer contact length, showing a device resistance below 36 kilohms and on-current above 15 microampere per tube. The p-type end-bonded contact, formed through the reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier. This strategy promises high-performance SWNT transistors, enabling future ultimately scaled device technologies. 

Graphene as a front contact for silicon-perovskite tandem solar cells

As reported by HZB : HZB team develops elegant process for coating fragile perovskite layers with graphene for the first time. Subsequent measurements show that the graphene layer is an ideal front contact in several respects.

The perovskite film (black, 200-300 nm) is covered by Spiro.OMeTAD, Graphene with gold contact at one edge, a glass substrate and an amorphous/crystalline silicon solar cell. Credit: F. Lang / HZB

Silicon absorbers primarily convert the red portion of the solar spectrum very effectively into electrical energy, whereas the blue portions are partially lost as heat. To reduce this loss, the silicon cell can be combined with an additional solar cell that primarily converts the blue portions. Teams at HZB have already acquired extensive experience with these kinds of tandem cells. A particularly effective complement to conventional silicon is the hybrid material called perovskite. It has a band gap of 1.6 electron volts with organic as well as inorganic components. However, it is very difficult to provide the perovskite layer with a transparent front contact. While sputter deposition of indium tin oxide (ITO) is common practice for inorganic silicon solar cells, this technique destroys the organic components of a perovskite cell.

 

Graphene as transparent front contact:

Now a group headed by Prof. Norbert Nickel has introduced a new solution. Dr. Marc Gluba and PhD student Felix Lang have developed a process to cover the perovskite layer evenly with graphene. Graphene consists of carbon atoms that have arranged themselves into a two-dimensional honeycomb lattice forming an extremely thin film that is highly conductive and highly transparent.

Fishing for graphene:

As a first step, the scientists promote growth of the graphene onto copper foil from a methane atmosphere at about 1000 degrees Celsius. For the subsequent steps, they stabilise the fragile layer with a polymer that protects the graphene from cracking. In the following step, Felix Lang etches away the copper foil. This enables him to transfer the protected graphene film onto the perovskite. “This is normally carried out in water. The graphene film floats on the surface and is fished out by the solar cell, so to speak. However, in this case this technique does not work, because the performance of the perovskite degrades with moisture. Therefore we had to find another liquid that does not attack perovskite, yet is as similar to water as possible”, explains Gluba.

Ideal front contact:

Subsequent measurements showed that the graphene layer is an ideal front contact in several respects. Thanks to its high transparency, none of the sunlight’s energy is lost in this layer. But the main advantage is that there are no open-circuit voltage losses, that are commonly observed for sputtered ITO layers. This increases the overall conversion efficiency. “This solution is comparatively simple and inexpensive to implement”, says Nickel. “For the first time, we have succeeded in implementing graphene in a perovskite solar cell. This enabled us to build a high-efficiency tandem device.”

 

Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells

Felix Lang, Marc A. Gluba, Steve Albrecht, Jörg Rappich, Lars Korte, Bernd Rech, and Norbert H. Nickel
J. Phys. Chem. Lett., 2015, 6 (14), pp 2745–2750
DOI: 10.1021/acs.jpclett.5b0117

Photoshow Baltic ALD 2015 in Tartu Estonia

Here pictures in social media and that you send to me (jonas.sundqvist@baldengineering.com) will be publish to cover the scientific and social program of The 13th International Baltic Conference on Atomic Layer Deposition will be held in Tartu, Estonia, at the Institute of Physics of the University of Tartu on September 28–29, 2015.

Twitter Hash Tag : #BalticALD

Following the Baltic ALD 2015 Conference, the annual meeting of the COST project HERALD 

(http://www.european-ald.net) will be held at Dorpat Conference Center, Tartu, on September 30, 2015. Please also take picture at this event!

              

SCIENTIFIC PROGRAM:

http://bald2015.ee/program-baltic-ald-2015/schedule/

 Book of abstracts (Riikka Puurunen, VTT, Twitter)

A bus load of ALD scientists from Helsinki heading for the Helsinki-Tartu flight. Last time (2002) they took the bus all the way to Tartu.

Tartu as viewed from the conference Hotel on Sunday afternoon (Irina Kärkkänen, Sentech)

Conference bag - must be the best looking bag ever in the History of ALD (Riikka Puurunen, VTT, Twitter)

 The Russian ALD bag next to the Estonian ALD Bag below the VPHA Poster (Riikka Puurunen, VTT, Twitter)

 Participant distribution - Finland on top followed by Estonia and Germany (Riikka Puuronen, VTT, Twitter)

 View at the podium (Simon Rushworth, EpiValance, LinkedIn)

Modeling area-selective ALD, talk by Simon Elliott Tyndall (Riikka Puurunen, Twitter)

Timo Vähä-Ojala from Picosun talked about modelling of gas flow in ALD reactor (Tero Pilvi, Picosun)

Riikka Puurunen VTT -  Mechanical property mapping of ALD thin films (Christoph Hossbach, TU-Dresden) 

SOCIAL PROGRAM:

"Colours, colours! Physicum building at Tartu University" (Riikka Puurunen,  VTT, Twitter)

 

Welcome Reception September 27, 2015
Conference Dinner September 28, 2015

"Conference dinner at AHHAA science centre was memorable with the pyro show, good food, music, and company" (Riikka Puurunen, VTT, Twitter)

Guided City Tours September, 29, 2015 

SPONSORING

The conference venue showing the Exhibition area for a number of sponsoring companies: Armgate, Picosun, Oxford Instruments, Beneq, STREM Chemicals, SENTECH Instruments, Semilab, FAB Support.

Atomic Layer Deposition from Dissolved Precursors

Funny, I was just discussing an early french publication (see below) )from 1984 on Twitter with Riikka Puurunen with respect to the VPHA project and almost instantly I got an e-mail alert on this very cool publication in Nano Letter from Julien Bachmann and Lionel Santinacci (Hello again!) and co-workers on the same topic (liquid ALD) - hmm no early night tonight either... 

Atomic Layer Deposition from Dissolved Precursors

Yanlin Wu, Dirk Döhler, Maïssa Barr, Elina Oks, Marc Wolf, Lionel Santinacci, and Julien Bachmann

Department of Chemistry and Pharmacy, Friedrich-Alexander University of Erlangen-Nürnberg, Egerlandstrasse 1, D−91058 Erlangen, Germany
¥ CNRS, CINaM UMR 7325, Aix Marseille Université, F−13288 Marseille, France
‡ Departments of Chemistry and Physics, University of Hamburg, Sedanstrasse 19, D−20146 Hamburg, Germany
Nano Lett., Article ASAP
DOI: 10.1021/acs.nanolett.5b01424

 

 

Abstract

We establish a novel thin film deposition technique by transferring the principles of atomic layer deposition (ALD) known with gaseous precursors toward precursors dissolved in a liquid. An established ALD reaction behaves similarly when performed from solutions. “Solution ALD” (sALD) can coat deep pores in a conformal manner. sALD offers novel opportunities by overcoming the need for volatile and thermally robust precursors. We establish a MgO sALD procedure based on the hydrolysis of a Grignard reagent.

 

An amazing Spatial Liquid ALD machine from the mid 1980s (Nicolau1985, CEA, FRA)