Dresden Memory Startup To Debut At Semicon Europa

EETimes reports : A startup company that is working on a ferroelectric non-volatile memory technology based on hafnium oxide is set to make its debut at the Semicon Europa exhibition taking place in Dresden, Germany, October 6 to 8.

The company is in the process of being spun out from the nano- and micro- laboratory (NaMLab) at the Technical University of Dresden. It is currently listed as The Ferroelectric Memory Company (FMC) although CEO Stefan Mueller told EE Times Europe said that the name may change during the formal company creation and registration process.

The company is the product of work at NaMLab on the ferroelectric effect in thin films of silicon-doped hafnium dioxide. That work was, in turn, based on a discovery made in research at now defunct DRAM manufacturer Qimonda in 2007 by Tim Boeske that hafnium dioxide, if prepared in the right way could be made to demonstrate a ferroelectric effect. Hafnium oxide is well known as an insulator material used for high-k metal-gate (HKMG) transistor structures. 

TEM of FeFET processed in 28 nm high-k metal gate CMOS Technology (left) and 2D TCAD-model for device simulation (right). (Picture from NaMLab)

FMC has been formed by NaMLab to commercialize the work and has taken over a publicly-funded program that will provide €500,000 (about $565,000) to cover development over the period April 2015 to September 2016. Meanwhile the small group of engineers that have formed the company are looking for early-stage investment and potential partners, Mueller said.

Full story at EETimes : http://www.eetimes.com/document.asp?doc_id=1327699&page_number=1

Earlier blog posts : http://baldengineering.blogspot.de/2015/07/the-ferroelectric-memory-company-fcm.html

ALD of Co9S8 and Its Application for Supercapacitors

Vapor-Phase Atomic Layer Deposition of Co9S8 and Its Application for Supercapacitors

Hao Li, Yuanhong Gao, Youdong Shao, Yantao Su, and Xinwei Wang

School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, China

Nano Lett., Article ASAP

DOI: 10.1021/acs.nanolett.5b02508

Publication Date (Web): August 27, 2015

Atomic layer deposition (ALD) of cobalt sulfide (Co9S8) is reported. The deposition process uses bis(N,N′-diisopropylacetamidinato)cobalt(II) and H2S as the reactants and is able to produce high-quality Co9S8 films with an ideal layer-by-layer ALD growth behavior. The Co9S8films can also be conformally deposited into deep narrow trenches with aspect ratio of 10:1, which demonstrates the high promise of this ALD process for conformally coating Co9S8 on high-aspect-ratio 3D nanostructures. As Co9S8 is a highly promising electrochemical active material for energy devices, we further explore its electrochemical performance by depositing Co9S8 on porous nickel foams for supercapacitor electrodes. Benefited from the merits of ALD for making high-quality uniform thin films, the ALD-prepared electrodes exhibit remarkable electrochemical performance, with high specific capacitance, great rate performance, and long-term cyclibility, which highlights the broad and promising applications of this ALD process for energy-related electrochemical devices, as well as for fabricating complex 3D nanodevices in general.

Surface Chemistry of Copper Metal and Copper Oxide ALD

To produce continuous non-island forming films of copper by ALD is extremely difficult. Here is a good article from Fraunhofer ENAS in Chemnitz, Germany, on the mechanism behind ALD of Copper and coper oxide using the rather well studied Cu(acac)2 precursor but not so easy process. 

Surface Chemistry of Copper Metal and Copper Oxide Atomic Layer Deposition from Copper(II) Acetylacetonate: A Combined First-Principles and Reactive Molecular Dynamics Study

(Physical Chemistry Chemical Physics) Monday September 14th 2015
Author(s): Xiao Hu, Joerg Schuster, Stefan Schulz, Thomas Gessner
DOI:10.1039/C5CP03707G

Atomistic mechanisms for the atomic layer deposition using the Cu(acac)2 (acac = acetylacetonate) precursor are studied by first-principles calculations and reactive molecular dynamics simulations. The results show that Cu(acac)2 chemisorbs on the hollow site of the Cu(110) surface and decomposes easily into a Cu atom and the acac-ligands. A sequential dissociation and reduction of the Cu precursor [Cu(acac)2→Cu(acac)→Cu] is observed. Further decomposition of the acac-ligand is unfavorable on the Cu surface. Thus additional adsorption of the precursors may be blocked by adsorbed ligands. Molecular hydrogen is found to be nonreactive towards Cu(acac)2 on Cu(110), whereas individual H atoms easily lead to bond breaking in the Cu precursor upon impact, and thus release the surface ligands into the gas-phase. On the other hand, water reacts with Cu(acac)2 on a Cu2O substrate through a ligand-exchange reaction, which produces gaseous H(acac) and surface OH species. Combustion reactions with the main by-products CO2 and H2O are observed during the reaction between Cu(acac)2 and ozone on CuO surface. The reactivity of different co-reactants toward Cu(acac)2 follows the order H > O3 > H2O.

New Record for Next-Generation Solar Cells to be Presented by Imec at EU PVSEC 2015

New Record Achievements on Next-Generation Solar Cells and Smart Solar Modules to be Presented at EU PVSEC 2015

EU PVSEC 2015 – Sept. 14, 2015 – At this week’s European PV Solar Energy Conference and Exhibition (EU PVSEC) nano-electronics research center imec will present achievements covering the broad spectrum of imec’s comprehensive photovoltaic-related research. Imec’s scientists and researchers will present its latest results in n-PERT solar cells, perovskite solar cell technology and its emerging PV energy yield prediction modeling.

 

Presenting a total of 19 papers, 12 of which are oral presentations, imec will highlight its new record conversion efficiency of 22.5 percent for a six inch n-PERT solar cell, resulting from material and architectural optimizations. N-type silicon solar cells are considered as promising next-generation alternatives to p-type solar cells thanks to their ability to withstand light-induced degradation, and higher tolerance to common metal impurities and high diffusion lengths.

In another presentation at EU PVSEC, imec’s perovskite solar cell, which has been further improved to reach new highest conversion efficiencies of 17 percent, will also be featured. Integrated into a module, a 12.5 percent record module efficiency was demonstrated, further validating that organometal halide perovskites are a promising material for thin-film solar applications.

An emerging research focus at imec is on PV energy yield predictions. In order to optimize the energy yield production of the smart grid, we need accurate predictions of the output of solar power plants in variable weather conditions. This information can be used to stabilize the grid, and to develop smart PV modules that react to the environment to optimize their energy generation yield. Therefore, imec has developed a simulation model that combines imec’s in-depth knowledge of solar cell technology with short term weather predictions. At the conference, imec will present promising modeling results that predict energy yield from solar panels under non-homogeneous irradiation, including e.g. the effects of temperature gradients resulting from wind, with an accuracy that is 20 percent better than the current models.
“The combination of talented scientists, a unique environment for R&D, and the drive of our industrial partners to focus on innovation, underscores imec’s prominent presence at EU PVSEC,” commented Jef Poortmans, Scientific Director of PV at imec. “Imec continues to push the boundaries of PV innovation beyond cell technology towards modeling and system aspects. We invite industrial companies to join us in this endeavor.”

New ALD Book, Atomic Layer Deposition (ALD): Fundamentals, Characteristics and Industrial Applications

Here is a new ALD book edited by Jeannie Valdez Atomic Layer Deposition (ALD): Fundamentals, Characteristics and Industrial Applications to be published by Nova in the 4th quarter 2015.


Editors: Jeannie Valdez
Book Description:
Atomic layer deposition (ALD) is a thin film deposition technique used in the mass production of microelectronics. In this book, novel nonvolatile memory devices are discussed. The chapters examine the low-temperature fabrication process of single-crystal platinum non-thin films using plasma-enhanced atomic layer deposition (PEALD). A comprehensive review of ALD surface coatings for battery systems is provided, as well as a theoretical calculation on the mechanism of thermal and plasma-enhanced atomic layer deposition of SiO2; and fluorine doping behavior in Zn-based conducting oxide film grown by ALD. (Imprint: Nova)

Table of Contents:

Preface

Chapter 1
Atomic Layer Deposition for Novel Nonvolatile Memory Devices
(Ai-Dong Li, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P. R. China)

Chapter 2
Platinum Nano- Thin Film for Plasmonic Photocatalytic Reaction
(Hung Ji Huang and Bo-Heng Liu, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan)

Chapter 3
Atomic Layer Deposition of Sub-Nano to Nanoscale Surface Coatings for Next-Generation Advanced Battery Systems
(Xiangbo Meng and Jeffrey W. Elam, Energy Systems Division, Argonne National Laboratory, Argonne, Illinois, USA)

Chapter 4
Theoretical Calculation on Mechanism of Thermal and Plasma-Enhanced Atomic Layer Deposition of SiO2
(Guo-Yong Fang, Li-Na Xu and Ai-Dong Li, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)

Chapter 5
Fluorine Doping Behavior in Zn-Based Conducting Oxide Film Grown by Atomic Layer Deposition
(Hyung-Ho Park, Young-June Choi and Kyung-Mun Kang, Department of Materials Science and Engineering, Yonsei University, Seoul, Korea)

Index
Series:
Chemical Engineering Methods and Technology
Binding: Hardcover
Pub. Date: 2015 - 4th Quarter
Pages: 7x10 - (NBC-R)
ISBN: 978-1-63483-869-6
Status: AN

Area-Selective ALD : Conformal Coating, Subnanometer Thickness Control, and Smart Positioning

Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning

Ming Fang†§ and Johnny C. Ho*†‡§
† Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong
‡ State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong
§ Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
ACS Nano, Article ASAP
DOI: 10.1021/acsnano.5b05249

 

 

Transistors have already been made three-dimensional (3D), with device channels (i.e., fins in trigate field-effect transistor (FinFET) technology) that are taller, thinner, and closer together in order to enhance device performance and lower active power consumption. As device scaling continues, these transistors will require more advanced, fabrication-enabling technologies for the conformal deposition of high-κ dielectric layers on their 3D channels with accurate position alignment and thickness control down to the subnanometer scale. Among many competing techniques, area-selective atomic layer deposition (AS-ALD) is a promising method that is well suited to the requirements without the use of complicated, complementary metal-oxide semiconductor (CMOS)-incompatible processes. However, further progress is limited by poor area selectivity for thicker films formed via a higher number of ALD cycles as well as the prolonged processing time. In this issue of ACS Nano, Professor Stacy Bent and her research group demonstrate a straightforward self-correcting ALD approach, combining selective deposition with a postprocess mild chemical etching, which enables selective deposition of dielectric films with thicknesses and processing times at least 10 times larger and 48 times shorter, respectively, than those obtained by conventional AS-ALD processes. These advances present an important technological breakthrough that may drive the AS-ALD technique a step closer toward industrial applications in electronics, catalysis, and photonics, etc. where more efficient device fabrication processes are needed.

JVSTA Most Read Atomic Layer Deposition Articles Published in 2014

Journal of Vacuum Science & Technology A Most Read Atomic Layer Deposition Articles Published in 2014 2.322 Impact  Factor

Visit Online Collection Reactor concepts for atomic layer deposition on agitated particles: A review Delphine Longrie, Davy Deduytsche and Christophe Detavernier J. Vac. Sci. Technol. A 32, 010802 (2014) |  Read More   Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications Philipp S. Maydannik, Tommi O. Kääriäinen, Kimmo Lahtinen, David C. Cameron, Mikko Söderlund, Pekka Soininen, Petri Johansson, Jurkka Kuusipalo, Lorenza Moro and Xianghui Zeng J. Vac. Sci. Technol. A 32, 051603 (2014)| Read More   Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology Micheal Burke, Alan Blake, Ian M. Povey, Michael Schmidt, Nikolay Petkov, Patrick Carolan and Aidan J. Quinn J. Vac. Sci. Technol. A 32, 031506 (2014) |  Read More   Analytic expressions for atomic layer deposition: Coverage, throughput, and materials utilization in cross-flow, particle coating, and spatial atom ic layer deposition Angel Yanguas-Gil and Jeffrey W. Elam J. Vac. Sci. Technol. A 32, 031504 (2014) |  Read More   Atmospheric pressure spatial atomic layer deposition web coating with in situ monitoring of film thickness Alexander S. Yersak, Yung C. Lee, Joseph A. Spencer and Markus D. Groner J. Vac. Sci. Technol. A 32, 01A130 (2014) |  Read More   In situ synchrotron based x-ray techniques as monitoring tools for atomic layer deposition Kilian Devloo-Casier, Karl F. Ludwig, Christophe Detavernier and Jolien Dendooven J. Vac. Sci. Technol. A 32, 010801 (2014) | Read More   Capacitance and conductance versus voltage characterization  of Al2O3 layers prepared by plasma enhanced atomic layer deposition at  25° C < T < 200°C Karsten Henkel, Hassan Gargouri, Bernd Gruska, Michael Arens, Massimo Tallarida and Dieter Schmeißer J. Vac. Sci. Technol. A 32, 01A107 (2014) | Read More Hybrid inorganic-organic superlattice structures with atomic layer deposition/molecular layer deposition Tommi Tynell, Hisao Yamauchi and Maarit Karppinen J. Vac. Sci. Technol. A 32, 01A105 (2014)| Read More   Vibration atomic layer deposition for conformal nanoparticle coating Suk Won Park, Jun Woo Kim, Hyung Jong Choi and Joon Hyung Shim J. Vac. Sci. Technol. A 32, 01A115 (2014) |  Read More   Selective atomic layer deposition of zirconia on copper patterned silicon substrates using ethanol as oxygen source as well as copper reductant Sathees Kannan Selvaraj, Jaya Parulekar and Christos G. Takoudis J. Vac. Sci. Technol. A 32, 010601 (2014)| Read More

Chalmers University of Technology have developed a new way to study nanoparticles one at a time

Yet another recent innovative application using Gold! Scientists at Chalmers University of Technology have developed a new way to study nanoparticles one at a time, and have discovered that individual particles that may seem identical in fact can have very different properties. The results, which may prove to be important when developing new materials or applications such as hydrogen sensors for fuel cell cars, have been published in Nature Materials.

A single gold plasmonic nanoantenna probes the hydrogen absorption in an adjacent palladium nanocube. Illustration by Ella Marushchenko and Alex Tokarev.

– We were able to show that you gain deeper insights into the physics of how nanomaterials interact with molecules in their environment by looking at the individual nanoparticle as opposed to looking at many of them at the same time, which is what is usually done, says Associate Professor Christoph Langhammer, who led the project.

By applying a new experimental approach called plasmonic nanospectroscopy, the group studied hydrogen absorption into single palladium nanoparticles and found that particles with exactly the same shape and size may exhibit differences as great as 40 millibars in the pressure at which hydrogen is absorbed. The development of sensors that can detect hydrogen leaks in fuel cell powered cars is one example of where this new understanding could become valuable in the future.

– One main challenge when working on hydrogen sensors is to design materials whose response to hydrogen is as linear and reversible as possible. In that way, the gained fundamental understanding of the reasons underlying the differences between seemingly identical individual particles and how this makes the response irreversible in a certain hydrogen concentration range can be helpful, says Langhammer.

Others have looked at single nanoparticles one at a time, but the new approach introduced by the Chalmers team uses visible light with low intensity to study the particles. This means that the method is non-invasive and does not disturb the system it is investigating by, for example, heating it up.

– When studying individual nanoparticles you have to send some kind of probe to ask the particle ‘what are you doing?’. This usually means focusing a beam of high-energy electrons or photons or a mechanical probe onto a very tiny volume. You then quickly get very high energy densities, which might perturb the process you want to look at. This effect is minimized in our new approach, which is also compatible with ambient conditions, meaning that we can study nanoparticles one at a time in as close to a realistic environment as possible.

Interdisciplinary collaboration

The project has been a successful collaboration initiative within the Chalmers Area of Advance Nanoscience and Nanotechnology, with a strong ambition to work interdisciplinarily. It involves researchers from the groups of Christoph Langhammer, Fredrik Westerlund and Kasper Moth-Poulsen at the departments of Physics, Biology and Chemistry. The Area of Advance also funded PhD student and first author of the published paper, Svetlana Syrenova, who performed all the single particle experiments, and a postdoctoral fellow, Yuri Diaz Fernandez who developed the colloidal self-assembly process used to make the samples together with PhD student Tina Gschneidtner.

– Svetlana Syrenova has patiently done hundreds of experiments over the last three years. And though it has been tempting at times to publish the results earlier, she was always ready to give it one more try and improve things further. This was one of the keys to succeed with publishing our work in such a prestigious journal, together with the fantastic collaboration with the Moth-Poulsen group stimulated by the Area of Advance, says Langhammer. 

A new scientific paradigm

Even though they have now reached the level where their results are ready to be published, Christoph Langhammer believes they have just scratched the surface of what their discovery and developed experimental methodology will lead to in relation to further research. He hopes that they have helped to establish a new experimental paradigm, where looking at nanoparticles individually will become standard in the scientific world.

– It is not good enough to look at, and thus obtain an average of, hundreds or millions of particles if you want to understand the details of how nanoparticles behave in different environments and applications. You have to look at individual ones, and we have found a new way to do that. My own long-term vision is to apply our method to more complex processes and materials, and to push the limits in terms of how small nanoparticles can be for us to be able to measure them. Hopefully, along the way, we will gain even deeper insights into the fascinating world of nanomaterials.

TAU researcher harnesses gold nanoparticles to engineer novel biocompatible cardiac patch

After recent success by Barry Lab realizing precursors for gold ALD I see gold application appearing all the time. Here is a lifesaving recent application of gold nano particles from Tel Aviv University, Israel. 

Because heart cells cannot multiply and cardiac muscles contain few stem cells, heart tissue is unable to repair itself after a heart attack. Now Tel Aviv University researchers are literally setting a new gold standard in cardiac tissue engineering.

Picture from TUA press release 

Dr. Tal Dvir and his graduate student Michal Shevachof TAU's Department of Biotechnology, Department of Materials Science and Engineering, and Center for Nanoscience and Nanotechnology, have been developing sophisticated micro- and nanotechnological tools — ranging in size from one millionth to one billionth of a meter — to develop functional substitutes for damaged heart tissues. Searching for innovative methods to restore heart function, especially cardiac "patches" that could be transplanted into the body to replace damaged heart tissue, Dr. Dvir literally struck gold. He and his team discovered that gold particles are able to increase the conductivity of biomaterials.

In a study published by Nano Letters, Dr. Dvir's team presented their model for a superior hybrid cardiac patch, which incorporates biomaterial harvested from patients and gold nanoparticles. "Our goal was twofold," said Dr. Dvir. "To engineer tissue that would not trigger an immune response in the patient, and to fabricate a functional patch not beset by signalling or conductivity problems."

Full story: http://www.aftau.org/weblog-medicine--health?=&storyid4704=2110&ncs4704=3

Semiconductor Engineering about triple and quadruple patterning after 20/16/14nm [video]

David Abercrombie, advanced physical verification methodology program manager at Mentor Graphics, talks with Semiconductor Engineering about triple and quadruple patterning after 20/16/14nm.

 

Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

Yet another fundamental publication from Eindhoven and Oxford Instruments on one of the most important (PE)ALD processes for scaled semiconductor devices - silicon nitride. This time Tyndall has helped them out to sort out the growth mechanism to better understand growth promotion and inhibition that has been reported previously - BTBAS Silicon nitride PEALD by TU Eindhoven, Oxford Instruments and ASM Microchemistry

 

Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

Chaitanya Krishna Ande†, Harm C. M. Knoops†‡, Koen de Peuter†, Maarten van Drunen†, Simon D. Elliott§, and Wilhelmus M. M. Kessels*†

† Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven, The Netherlands
‡ Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP, United Kingdom
§ Tyndall National Institute, University College Cork, Dyke Parade, Lee Maltings, Cork, Ireland
J. Phys. Chem. Lett., 2015, 6, pp 3610–3614
DOI: 10.1021/acs.jpclett.5b01596

 

There is an urgent need to deposit uniform, high-quality, conformal SiNx thin films at a low-temperature. Conforming to these constraints, we recently developed a plasma enhanced atomic layer deposition (ALD) process with bis(tertiary-butyl-amino)silane (BTBAS) as the silicon precursor. However, deposition of high quality SiNx thin films at reasonable growth rates occurs only when N2 plasma is used as the coreactant; strongly reduced growth rates are observed when other coreactants like NH3 plasma, or N2–H2 plasma are used. Experiments reported in this Letter reveal that NHx- or H- containing plasmas suppress film deposition by terminating reactive surface sites with H and NHx groups and inhibiting precursor adsorption. To understand the role of these surface groups on precursor adsorption, we carried out first-principles calculations of precursor adsorption on the β-Si3N4(0001) surface with different surface terminations. They show that adsorption of the precursor is strong on surfaces with undercoordinated surface sites. In contrast, on surfaces with H, NH2 groups, or both, steric hindrance leads to weak precursor adsorption. Experimental and first-principles results together show that using an N2 plasma to generate reactive undercoordinated surface sites allows strong adsorption of the silicon precursor and, hence, is key to successful deposition of silicon nitride by ALD.

The ALD Hot Guys at Picosun has launched a new Picohot™ 400 source

Picosun Oy, leading supplier of industrial scale Atomic Layer Deposition (ALD) thin film coating solutions, now offers its customers an extensive range of new precursor sources especially designed for high volume manufacturing.

The now launched Picohot™ 400 source system is the latest addition to Picosun's highly sought-after product line of production-compatible high temperature sources. The Picohot™ 400 source system's ALD valves can be heated up to over 400^oC to enable efficient delivery of both solid and liquid very low volatility chemicals in large doses optimal for batch processing. The source is especially suitable for metal chloride precursors, ensuring particle-free processing of e.g. hafnium oxide and many other materials on up to 300 mm wafers. The large internal volume of the source container guarantees long, continuous process uptime with effective precursor utilization and minimized number of service breaks. A separate, production-compatible purge valve speeds up the maintenance procedures even further.

Picosun's industry-scale precursor delivery solutions are further complemented by a temperature-stabilized, high volume Picosolution™ 2000 source system for up to two liters of liquid precursor chemicals.

"As the number of industrial ALD applications keeps booming there is a growing need to widen the selection of precursor chemicals. Precursors for several important production processes only exist as solids or low volatility liquids. Our leading experience in ALD system design now enables the first, true production-scale high temperature source systems designed solely based on the requirements of the ALD method and fulfilling the strictest quality standards of the semiconductor industries. We are pleased to provide our customers with these systems to make their most advanced novel products come true in high manufacturing volumes," states Mr. Juhana Kostamo, Managing Director of Picosun.

Top down, bottom up, and in-between approaches to new materials by ALD and MLD

A highly interesting review by Keith Gregorczyk and Mato Knez on Top down, bottom up, and in-between approaches to new materials by ALD and MLD. I haven´t red it yet but I will do asap!

Hybrid nanomaterials through molecular and atomic layer deposition: Top down, bottom up, and in-between approaches to new materials

Keith Gregorczyk and Mato Knez 

Progress in Materials Science, Volume 75, January 2016, Pages 1–37, Available online 11 August 2015

doi:10.1016/j.pmatsci.2015.06.004

The ability to produce or alter materials to obtain drastically different or improved properties has been the driving goal of materials science since its inception. Combining multiple elements, compounds, or materials while maintaining the beneficial aspects of each constituent is a complex problem often involving highly interdisciplinary research. Hybrid materials, i.e. materials that incorporate organic and inorganic parts, have become popular in a variety of fields. Though not entirely new, the modern embodiment of hybrid materials has led to a large variety of new materials and techniques to produce them. One of the most recent being combination of atomic layer deposition (ALD), which produces inorganic materials, and molecular layer deposition (MLD), which produces organic materials. Furthermore, a variation on these techniques, commonly referred to as infiltration, has allowed for the modification of a variety of natural and synthetic polymers with surprising results related to their bulk mechanical properties. In this review three approaches are taken. First, hybrid materials through bottom-up combinations of ALD and MLD are reviewed, focusing on the process and properties of the resulting materials. Second, the modification of biomaterials through coating is discussed, and finally the relatively new concept of vapor phase infiltration is considered as a new and unique method to produce hybrid materials from a top down perspective.

Principles of Precursor Design for Vapour Deposition Methods

Here is a fresh and excellent publication from Barry Lab at Department of Chemistry, Carleton University on CVD and ALD precursor design.

Principles of Precursor Design for Vapour Deposition Methods

Sara E. Koponen, Peter G. Gordon, Seán T. Barry

Polyhedron, Received 6 June 2015, Accepted 24 August 2015

doi:10.1016/j.poly.2015.08.024

From the graphical abstract: Precursor design is central to the advancement of CVD and ALD technologies. These thin film deposition techniques rely on molecular precursors which have low melting points, high volatility, stability and specific reactivity. These properties are discussed through examples of group 11 and 13 precursors.

Chemical vapour deposition (CVD) and atomic layer deposition (ALD) are attractive techniques for depositing a wide spectrum of thin solid film materials, for a broad spectrum of industrial applications. These techniques rely on volatile, reactive, and thermally stable molecular precursors to transport and deposit growth materials in a kinetically controlled manner, resulting in uniform, conformal, high purity films. Developments in these fields depend on careful precursor design. We discuss the qualities that make successful CVD or ALD precursors (low melting point, high volatility, stability and specific reactivity) and the widely applicable design principles used to achieve them, through examples of group 11 and 13 precursors including amidinates, guanidinates and iminopyrrolidinates. We highlight the most valuable techniques that we use to asses potential precursors on the basis of the discussed qualities, and to elucidate relevant mechanisms of decomposition and surface reactivity. There is a strong focus on thermogravimetric analysis (TGA), and solid state (SS) and solution NMR studies.

TiC PEALD workfunction tuning by SK Hynix and KAIST

Here is an interesting paper on TiC PEALD workfunction tuning by SK Hynix and KAIST. They show how the workfunction of  PEALD TiC film is affected by growth temperature and a tunable WF of TiC film is compatible with a gate-first and/or gate-last process.

TiC ALD was deposited by cycling TiCl₄ and TMA, in this case TMA was used as a source of carbon and H₂ as a reactant gas with a plasma power of 300 W and argon as a purge gas and carrier gas.The films were characterized as MOS capacitor consisting of a TiC/SiO₂/Si stack and the WF was extracted classically by having various SiO₂ thicknesses.

Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Choong-Ki Kim,  Hyun Jun Ahn, Jung Min Moon, Sukwon Lee, Dong-II Moon, Jeong Soo Park, Byung-Jin Cho, Yang-Kyu Choi, Seok-Hee Lee, 

Solid-State Electronics, Volume 114, December 2015, Pages 90–93

Abstract

The effects of the deposition temperature on titanium carbide film formed by atomic layer deposition are investigated for gate workfunction (WF) engineering. As the deposition temperature increases from 250 °C to 500 °C, the WF of the TiC decreases from 5.24 eV to 4.45 eV. This WF dependency on the deposition temperature is mainly attributed to the average WF of each orientation of the sub-planes of the TiC film. An investigation of a tunable WF is conducted through Auger electron spectroscopy, transmission electron microscopy, and X-ray diffraction.

Nanocrystalline Ferroelectric BiFeO3 by Low-Temperature ALD

Joint research from Spain, Germany, UK, and USA present a low temperature process for ferroelectric BeFeO3 which opens possibilities for ferroelectric oxides on 3D substrates. BeFeO3 is a room temperature multiferroic material and due to its ferroelectric photovoltaic (FPV) effect bismuth ferrite have several applications in the field of magnetism, spintronics, photovoltaics etc.

Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition

Mariona Coll*†, Jaume Gazquez†, Ignasi Fina‡§, Zakariya Khayat∥, Andy Quindeau‡, Marin Alexe§, Maria Varela⊥, Susan Trolier-McKinstry∥, Xavier Obradors†, and Teresa Puig†

† Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain
‡ Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale), D-06120, Germany
§ Department of Physics, University of Warwick, Coventry CV 4 7AL, United Kingdom
∥ The Pennsylvania State University, N-227 Millennium Science Complex, University Park, Pennsylvania 16802, United States
⊥ Departamento de Física Aplicada III, Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040, Madrid, Spain

Chem. Mater., Article ASAP
DOI: 10.1021/acs.chemmater.5b02093
Publication Date (Web): August 20, 2015

Abstract

In this work, ferroelectricity is identified in nanocrystalline BiFeO3 (BFO) thin films prepared by low-temperature atomic layer deposition. A combination of X-ray diffraction, reflection high energy electron diffraction, and scanning transmission electron microscopy analysis indicates that the as-deposited films (250 °C) consist of BFO nanocrystals embedded in an amorphous matrix. Postannealing at 650 °C for 60 min converts the sample to a crystalline film on a SrTiO3 substrate. Piezoelectric force microscopy demonstrates the existence of ferroelectricity in both as-deposited and postannealed films. The ferroelectric behavior in the as-deposited stage is attributed to the presence of nanocrystals. Finally, a band gap of 2.7 eV was measured by spectroscopic ellipsometry. This study opens broad possibilities toward ferroelectric oxides on 3D substrates and also for the development of new ferroelectric perovskites prepared at low temperature.

UPDATE :Technical Program for Russia ALD 2015

Her is an updated version of the Technical Program for Russia ALD 2015! As you can see Dr. Riikka Puurunen from VTT Finland totally dominate the morning of the first day! Go Riikka!

Download : http://ald-conf.ru/assets/files/technical-program_v2.pdf

 

Extreme high apspect ratio nanotubes in polymer membranes produced by catalytic ALD

German scientists from Darmstadt and Hamburg has shown that the combination of ion-track technology and ALD provides unique opportunities for highly homogeneous and conformal coatings of extremely long nanochannels. The results clearly demonstrate successful conformal coating of cylindrical 30 μm long nanochannels with initial diameter between 55 and 18 nm by three different inorganic materials (TiO2, SiO2, and Al2O3). The ALD process was carefully adjusted to temperatures low enough to avoid damage to the ion-track etched polymer membranes.

 

(a) Flexible SiO₂ nanotubes exhibiting an outer diameter of ~50 nm and a wall thickness of ~20 nm. (b) Al₂O₃ nanotubes (outer diameter ~50 nm, wall thickness ~15 nm), which are broken due to their rather high brittleness. They are attached to the flat Al₂O₃-film deposited on the polycarbonate surface. (c) TiO₂ nanotubes (outer diameter ~100 nm due to 240 s of etching time, wall thickness ~10 nm) with a length corresponding to the template thickness.

Interestingly they have used the pyridine catalyzed process for H2O low temperature SiO2 (SiCl4) and for TiO2 (titanium isopropoxide). I have never seen it used for other than SiCl4 and HCDS for growing SiO2. This got me curious to know if there is any work done with other metal chlorides - you know the usual suspects - Zr, Hf, Ta, ...

Check out all the details and the experimental part especially in the OPEN ACCESS paper below!

TiO2, SiO2, and Al2O3 coated nanopores and nanotubes produced by ALD in etched ion-track membranes for transport measurements [OPEN ACCESS]

Anne Spende, Nicolas Sobel, Manuela Lukas, Robert Zierold, Jesse C Riedl, Leonard Gura, Ina Schubert, Josep M Montero Moreno, Kornelius Nielsch, Bernd Stühn, Christian Hess, Christina Trautmann and Maria E Toimil-Molares

Published 30 July 2015 • © 2015 IOP Publishing Ltd, Nanotechnology, Volume 26, Number 33

Scheme of fabrication of TiO₂, SiO₂, and Al₂O₃ coated track-etched membranes. (a) Polycarbonate foils are irradiated with high-energy heavy ions; each projectile creates an individual ion track; (b) chemical etching converts ion tracks into cylindrical nanochannels of well-defined diameter; (c) ALD of TiO₂, SiO₂, and Al₂O₃ produces conformal homogeneous coatings.

Low-temperature atomic layer deposition (ALD) of TiO2, SiO2, and Al2O3 was applied to modify the surface and to tailor the diameter of nanochannels in etched ion-track polycarbonate membranes. The homogeneity, conformity, and composition of the coating inside the nanochannels are investigated for different channel diameters (18–55 nm) and film thicknesses (5–22 nm). Small angle x-ray scattering before and after ALD demonstrates conformal coating along the full channel length. X-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy provide evidence of nearly stoichiometric composition of the different coatings. By wet-chemical methods, the ALD-deposited film is released from the supporting polymer templates providing 30 μm long self-supporting nanotubes with walls as thin as 5 nm. Electrolytic ion-conductivity measurements provide proof-of-concept that combining ALD coating with ion-track nanotechnology offers promising perspectives for single-pore applications by controlled shrinking of an oversized pore to a preferred smaller diameter and fine-tuning of the chemical and physical nature of the inner channel surface.

GEMStar-CAT Dual™ Dual Reactor ALD and Catalyst Synthesis System by Arradiance

US ALD company Arradiance has released a new version of their GEMStar series of ALD tools -The GEMStar-CAT Dual™ Dual Reactor ALD and Catalyst Synthesis System. The custom GEMStar-DUAL CatalystTM System developed in partnership with the Chemical Sciences and Engineering Division of Argonne National Laboratory has unique capabilities. Arradiance used its skill combining Atomic Layer Deposition, System Design and Controls to produce a system that is unparalleled for Catalyst synthesis research

 

 

 Full specs and details can be downloaded in here and a publication is given below:

Catalyst synthesis and evaluation using an integrated atomic layer deposition synthesis–catalysis testing tool

Jeffrey Camacho-Bunquin, Heng Shou, Payoli Aich, David R. Beaulieu, Helmut Klotzsch, Stephen Bachman, Christopher L. Marshall, Adam Hock, and Peter Stair

(Received 24 June 2015; accepted 4 August 2015; published online 24 August 2015)

An integrated atomic layer deposition synthesis-catalysis (I-ALD-CAT) tool was developed. It combines an ALD manifold in-line with a plug-flow reactor system for the synthesis of supported catalytic materials by ALD and immediate evaluation of catalyst reactivity using gas-phase probe reactions. The I-ALD-CAT delivery system consists of 12 different metal ALD precursor channels, 4 oxidizing or reducing agents, and 4 catalytic reaction feeds to either of the two plug-flow reactors. The system can employ reactor pressures and temperatures in the range of 10−3 to 1 bar and 300–1000 K, respectively. The instrument is also equipped with a gas chromatograph and a mass spectrometer unit for the detection and quantification of volatile species from ALD and catalytic reactions. In this report, we demonstrate the use of the I-ALD-CAT tool for the synthesis of platinum active sites and Al2O3 overcoats, and evaluation of catalyst propylene hydrogenation activity. © 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4928614]

Japanese researchers provide record low Dit in ALD Al2O3/La2O3/InGaAs gate stacks

InGaAs is one of the most promising III/V semiconductor materials for n-channel MOSFETs because of its extremely high electron mobility of ∼13 800 cm²/V s. However, there  is a major issue with InGaAs not having a high quality native oxide like Silicon resulting in a high interface state density at InGaAs MOS interfaces degrades the MOSFET performance because of Ga dangling bonds and/or As-As dimers created during the oxidation process at InGaAs surfaces. It has been reported that the passivation of trivalent oxides such as Gd2O3 or Al2O3 with InGaAs surfaces can eliminate such dangling bonds and dimers because of the abrupt and chemical-bond-well-arranged interface between the trivalent oxides and InGaAs.

TEM image of Au/Al2O3 (3.5 nm)/La2O3 (0.4 nm)/InGaAs gate stacks. Citation: J. Appl. Phys. 118, 085309 (2015); http://dx.doi.org/10.1063/1.4929650

ALD HfO2 has already been introduced at 45 nm CMOS and is still the dominating high-k material in high performance CMOS including recent Si FinFET technologies. Therefore, many have chosen to combine HfO2 with the Al2O3/InGaAs structure by in-situ continuously ALD has been employed for CET scaling. Thin CET of ∼1.08 nm and low Dit of ∼5 × 10¹² cm⁻² eV⁻¹ have been realized in the HfO2/Al2O3/InGaAs gate stacks.

Another high-k that has commonly been used and is used e.g. as a dopant in the IBM Alliance 28 nm planar CMOS technology is La2O3, which is also trivalent oxide. It has been shown on InGaAs that La2O3 can further improve the MOS interface quality by the formation of Ga-O-La and In-O-La bonds. [ref]

In a very good study presented below by University of Tokyo, JST-CREST and Sumitomo Chemicals a high quality La2O3 films were deposited on InGaAs by ALD. It was found that the La2O3/InGaAs interfaces provide recorded-low Dit of ∼3 × 10¹¹ cm⁻² eV⁻¹ as the InGaAs MOS interfaces, which is attributable probably to the intermixing reaction between La2O3 and InGaAs. It is concluded, as a result, that the Al2O3/La2O3/InGaAs gate stacks can realize Dit lower than in the conventional Al2O3/InGaAs MOS interfaces with maintaining small hysteresis and low gate leakage by optimizing the thickness of Al2O3 and La2O3.

For me now some questions remains - why not combine the best of the best in one stack, i.e., HfO2/La2O3/InGaAs? Perhaps with only a slight touch of blend with Al2O3. Another question that worries me when reading HKMG InGaAs papers is the very low thermal budget that has to be used.  The first high-k layer is deposited at 150 deg. C not destroy the super sensitive InGaAs interface. Most high-k materials needs to be deposited in the ranger 250 to 300 deg.C in order to perform at its best in addition PDAs or PMAs will bring out even more out of the material. Here and in other studies that I have seen a PMA of only 300 deg. C is used. Just imagine bringing this stack on to a silicon based channel material and it will not perform too much better than old poly/SiON with respect to CET / Leakage performance. I guess in the end it is all about the higher mobility given by a III/V channel. It just hurts every time seeing all these smart guys using a relatively low performing high-k.

Please find the OPEN ACCESS publication below!

Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition [OPEN ACCESS]

C.-Y. Chang, O. Ichikawa, T. Osada, M. Hata, H. Yamada, M. Takenaka and S. Takagi 

J. Appl. Phys. 118, 085309 (2015); http://dx.doi.org/10.1063/1.4929650

 

(a) D it of the Al2O3 (3.5 nm)/La2O3/InGaAs gate stacks as a parameter of the La2O3 ALD cycle numbers, and (b) the La2O3 ALD cycle number dependence of D it of Al2O3 (3.5 nm)/La2O3/InGaAs at the surface energy of 0.1 eV from midgap (E – E i). Citation: J. Appl. Phys. 118, 085309 (2015); http://dx.doi.org/10.1063/1.4929650

We examine the electrical properties of atomic layer deposition (ALD) La2O3/InGaAs and Al2O3/La2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La2O3/InGaAs interface provides low interface state density (D it) with the minimum value of ∼3 × 10¹¹ cm⁻² eV⁻¹, which is attributable to the excellent La2O3 passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La2O3. In order to simultaneously satisfy low D it and small hysteresis, the effectiveness of Al2O3/La2O3/InGaAs gate stacks with ultrathin La2O3 interfacial layers is in addition evaluated. The reduction of the La2O3 thickness to 0.4 nm in Al2O3/La2O3/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D it of the Al2O3/La2O3/InGaAs interfaces becomes higher than that of the La2O3/InGaAs ones, attributable to the diffusion of Al2O3 through La2O3 into InGaAs and resulting modification of the La2O3/InGaAs interface structure. As a result of the effective passivation effect of La2O3 on InGaAs, however, the Al2O3/10 cycle (0.4 nm) La2O3/InGaAs gate stacks can realize still lower D it with maintaining small hysteresis and low leakage current than the conventional Al2O3/InGaAs MOS interfaces.

BTBAS Silicon nitride PEALD by TU Eindhoven, Oxford Instruments and ASM Microchemistry

Silicon nitride is one of the fastest growing single ALD layer applications in advanced CMOS (hard mask, liner, spacers, multi-patterning, ...). Here is a very good fundamental investigation of PEALD using a rather well known silicon precursor BTBAS in an ICP remote plasma ALD system from Oxford instruments.This is a joint publication between Oxford Instruments and ASM Microchemistry and University partners at Eindhoven University of Technology and Queen Mary University of London

Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Harm C. M. Knoops, Eline M. J. Braeken, Koen de Peuter, Stephen E. Potts, Suvi Haukka, Viljami Pore, and Wilhelmus M. M. Kessels

ACS Appl. Mater. Interfaces, Article ASAP
DOI: 10.1021/acsami.5b06833 

 

 

Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300–500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si = 1.4 ± 0.1, mass density = 2.9 ± 0.1 g/cm3, refractive index = 1.96 ± 0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

Researchers at Case Western Reserve University directly photo-charged lithium batteries with 7.8 percent efficiency

As reported bu Phys.org : Researchers at Case Western Reserve University, however, have wired four perovskite solar cells (PSC) in series to enhance the voltage and directly photo-charged lithium batteries (LIB) with 7.8 percent efficiency—the most efficient reported to date, the researchers believe.

The research, published in the Aug. 27 issue of Nature Communications, holds promise for cleaner transportation, home power sources and more.

Efficiently photo-charging lithium-ion battery by perovskite solar cell [Open Access]

Jiantie Xu, Yonghua Chen & Liming Dai Nature Communications 6, Article number:8103 doi:10.1038/ncomms9103

 Schematic diagram of the fabricated system of PSC–LIB. (Nature Communications 6, Article number:8103)

Abstract:  Electric vehicles using lithium-ion battery pack(s) for propulsion have recently attracted a great deal of interest. The large-scale practical application of battery electric vehicles may not be realized unless lithium-ion batteries with self-charging suppliers will be developed. Solar cells offer an attractive option for directly photo-charging lithium-ion batteries. Here we demonstrate the use of perovskite solar cell packs with four single CH3NH3PbI3 based solar cells connected in series for directly photo-charging lithium-ion batteries assembled with a LiFePO4 cathode and a Li4Ti5O12 anode. Our device shows a high overall photo-electric conversion and storage efficiency of 7.80% and excellent cycling stability, which outperforms other reported lithium-ion batteries, lithium–air batteries, flow batteries and super-capacitors integrated with a photo-charging component. The newly developed self-chargeable units based on integrated perovskite solar cells and lithium-ion batteries hold promise for various potential applications.

The structure and the preparation procedures of CH3NH3PbI3 perovskite films (Supplementary information)

ЗАО «НПО СЕРНИЯ» приглашает посетить международный семинар «Atomic Layer Deposition Russia 2015 (ALD Russia 2015)»

[JSC "NPO sulfuric" invites you to visit the international seminar «Atomic Layer Deposition Russia 2015 (ALD Russia in 2015)"]

Вам интересны передовые разработки в области ALD? ЗАО «НПО СЕРНИЯ» приглашает посетить международный семинар «Atomic Layer Deposition Russia 2015 (ALD Russia 2015)», который пройдет в городе Долгопрудном 21-23 сентября, МФТИ.

Атомно-слоевое осаждение (ALD) представляет собой метод нанесения пленочных покрытий. Это мощный инструмент для изготовления ультратонких, высокооднородных и конформных слоев для применения в полупроводниковой промышленности для производства интегральных микросхем, датчиков, микро/наноэлектромеханических систем (MЭMS / НЭМС), для производства оптики, оптоэлектроники, солнечных батарей, биосовместимых покрытий для медицинских устройств, и т.д. Подробнее о применении метода ALD>>

Хотя российские (советские) ученые сыграли значительную роль в развитии научных принципов данного метода в 1960-е годы, до недавнего времени технология ALD не в полной мере применялась в России. Таким образом, целью Международного семинара ALD-2015 является консолидация быстро растущего ALD-сообщества в России и ознакомление российских исследователей с новыми разработками ведущих международных экспертов в этой области. Подробнее о конференции ALD Russia 2015>>

HERALD website with member profiles is going live www.european-ald.net

Check out the new HERALD website with member profiles just went live www.european-ald.net

HERALD promotes European research activity in Atomic Layer Deposition (ALD)

HERALD (COST action MP1402) aims to structure and integrate European research activity in atomic layer deposition (ALD), bringing together existing groups, promoting young scientists and reaching out to industry and the public. ALD is a unique technique for growing ultra-thin films that is enabling new developments in high-tech manufacturing sectors such as electronics, energy and coatings. With interest growing worldwide, the time is right to coordinate European activity in this field. HERALD supports collaboration through lab visits, workshops and training schools.

Low temperatture ALD of Copper by Peking University

Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma

Zheng Guo, Hao Li, Qiang Chen, Lijun Sang, Lizhen Yang, Zhongwei Liu, and Xinwei Wang

Chem. Mater., Article ASAP
DOI: 10.1021/acs.chemmater.5b02137

 

Agglomeration is a critical issue for depositing copper (Cu) thin films, and therefore, the deposition should be preferably performed below 100 °C. This work explores an atomic layer deposition (ALD) process for copper thin films deposited at temperature as low as 50 °C. The process employs copper(I)-N,N′-diisopropylacetamidinate precursor and H2 plasma, which are both highly reactive at low temperature. The deposition process below 100 °C follows an ideal self-limiting ALD fashion with a saturated growth rate of 0.071 nm/cycle. Benefitting from the low process temperature, the agglomeration of Cu thin films is largely suppressed, and the Cu films deposited at 50 °C are pure, continuous, smooth, and highly conformal, with the resistivity comparable to PVD Cu films. In-situ reaction mechanism studies by using quartz crystal microbalance and optical emission spectroscopy are followed, and the results confirm the high reactivity of the Cu amidinate precursor at low temperature. To the best of our knowledge, this is the first successful implementation of metal amidinate precursors for low-temperature (∼50 °C) ALD process. The strategy of using metal amidinate precursors in combination with highly reactive H2 plasma is believed to be extendable for the depositions of other pure metals at low temperature.

JVSTA Issue on ALD Deadline Extended to: Septemeber 5, 2015

Special Issue on Atomic Layer Deposition

JVST A is Soliciting Research Articles for Publication in a Special January/February 2016 Issue on Atomic Layer Deposition Submission Deadline Extended to: Septemeber 5, 2015 This special issue is planned in collaboration with the 15th International Conference on Atomic Layer Deposition (ALD 2015) to be held in Portland, Oregon during June 28-July 1, 2015. The Special Issue will be dedicated to the science and technology of atomic layer controlled deposition of thin films. While a significant fraction of the articles are expected to be based on material presented at ALD 2015, research articles that are on ALD but were not presented at this conference are also welcome: the special issue will be open to all articles on the science and technology of ALD. Papers will be reviewed using the same criteria as regular JVST articles and must meet JVST standards for both technical content and written English. To be published in JVST, the manuscript must:   (1)   present original findings, conclusions or analysis that have not been published previously (2)   be free of errors and ambiguities, (3)   support conclusions with data and analysis, (4)   written clearly, and (5)   have high impact in its field.

Manuscript Deadline: September 5 , 2015     Click Here to Submit    Article Guidelines & Templates In preparing your article, you should follow the online instructions for contributors. Authors are encouraged to use the JVST templates. The easiest way to prepare your manuscript is to use the available JVST Article Template to delete and replace text as necessary.  This file and the template used to create it are available at the site above.  Online, you will have an opportunity to tell us that your paper is a part of the special issue by choosing "ALD Special Issue." Acceptable manuscript file types are MSWord, LaTeX, and PDF. For the initial submission/review process, a single PDF or MSWord file including the figures is sufficient. However, once a paper is accepted, MSWord or TeX file of the text, any tables and the list of figure captions along with the separate figure files will be required for final production. Use of color in Figures is encouraged. Your FIGURES CAN APPEAR ONLINE IN COLOR FOR FREE. Prepare illustrations in the final published size, not oversized or undersized. For any other details about manuscript preparation, please refer to the JVST A online instructions.