Virtual AVS ALD/ALE 2020 confernce summary

Here is a summary of the Virtual AVS ALD/ALE 2020 conference and BALD Engineering participation and Social Events during the confernece. For continued access to the presentations please see the AVS Summary below!

From the Monday invited speakers I would especially like to recommend the two talks on ALD and ALE, resp., by TEL Rob Clarke and LAM Keren Kanarik. As I have not watched all yet I will come with more review later.

Hope to meet some of you live at possibly the only live ALD Event 2020 - EFDS ALD for Industry in Freiburg Germany December 2-3, 2020 : LINK

Summary by AVS:

Conference Registration was strong with 800+ for Monday's Live Plenary; nearly 600 for the Tuesday and Wednesday Live Technical sessions; and about 360 for the Tuesday and Wednesday Live Tutorials. 

The ALD/ALE 2020 Online Scheduler and/or Mobile App contains 258 presentations: 22 Live Oral and Tutorial Lectures; 17 Invited Orals On Demand; 130 Contributed Orals On Demand; 89 Poster PDFs. 

All Live Technical and Tutorial Session recordings may be viewed by paid registrants by logging into the ALD/ALE 2020 Online Scheduler and/or Mobile App and selecting > Browse by Live Technical/Tutorial Sessions > Select Day > Select Session > View Recording.

Live Monday Invited Speakers:

• Mikko Ritala (University of Helsinki, Finland), "Meet the ALD 2020 Innovator Awardee"
• Robert Clark (TEL Technology Center‚ America‚ LLC), "Selective and Atomic Scale Processes to Enable Future Nano-Electronics" 
• Hyun-Chul Choi (LG Display, South Korea) "The First Application of ALD Technology in Display Industry"
• Frank Rosowski (BASF SE‚ Germany), "ALD on Powders for Catalysis"
• Keren Kanarik (Lam Research, USA), "The Flip Side of the Story: Atomic Layer Etching"

Live Tuesday Invited Speakers:

• Charles Winter (Wayne State University, USA), "Thermal Atomic Layer Deposition of Noble Metal Films Using Non-Oxidative Coreactants" 
• ALD Student Finalist Awardee (Winner): Jeff Schulpen (Eindhoven University of Technology‚ Netherlands), "Mixing It Up: Tuning Atomic Ordering in 2-D _Mo1-xWxS₂ Alloys"
• ALD Student Finalist Awardee: Saba Ghafourisaleh (University of Helsinki‚ Finland), "Deposition of Conductive PEDOT Thin Films with EDOT and ReCl₅ Precursors"
• ALD Student Finalist Awardee: Mikhail Krishtab (KU Leuven/Imec‚ Belgium), "Resistless Lithography Based on Local Surface Modification of Halogenated Amorphous Carbon"
• ALD Student Finalist Awardee: Karina Ashurbekova (CIC nanoGUNE BRTA‚ Spain), "Mimicking Chitin and Chitosan Type of Functionality with Novel Thin Films Grown by Molecular Layer Deposition"

Live Tuesday Tutorial Speakers:

• Anjana Devi (Ruhr-Universität Bochum, Germany), "ALD Precursor Chemistry: Synthetic Routes, Purification and Evaluation of Precursors"
• Neil Dasgupta (University of Michigan, USA), "Atomic Layer Engineering: Hardware Considerations for ALD System Design and Process Development"
• Angel Yanguas-Gil (Argonne National Laboratory, USA), "ALD on High Aspect Ratio and Nanostructured Materials: from Fundamentals to Economics"

Live Wednesday Invited Speakers:

• Noriaki Toyoda, Kota Uematsu (University of Hyogo‚ Japan), "Surface Reactions Between Metals and Diketone induced by Gas Cluster Ion Bombardments"
• ALE 2020 Best Student Paper Award:Nicholas Chittock (Eindhoven University of Technology, Netherlands),  "Isotropic Plasma ALE of Al₂O₃Using SF₆Plasma and TMA"
• Rudy Wojtecki (IBM Research – Almaden), "Monolayer Lithography: Exploiting Inhibition Contrast from the Extreme Ultraviolet Irradiation of Organic Monolayers for Area Selective Depositions"
• Jean-Sebastien Lehn (EMD Performance Materials), "Super-Conformal ALD of Metallic Mo Films by Simultaneous Deposition and Etch"
• Jeffrey W. Elam (Argonne National Laboratory), "Process Optimization in Atomic Layer Deposition Using Machine Learning"

Live Wednesday  Tutorial Speakers:

• Annelies Delabie (imec, Belgium), "Growth Mechanisms and Selectivity During Atomic Layer Deposition"
• Simon Elliott (Schrödinger, Ireland), "Self-Limiting Surface Reactions for Atomic-Level Control of Materials Processing" 
• Mark Kushner (University of Michigan, USA), "Fundamentals of ALE – Optimizing Passivation and Etch"

All On Demand session recordings and posters may be viewed by registrants by logging into the ALD/ALE 2020 Online Scheduler and/or Mobile App and selecting > Browse by On Demand Sessions > Select Topic > Select Presentation.

ALD On Demand Invited Speakers:

• Julien Bachmann (University of Erlangen, Germany), “ALD from Dissolved Precursors: Same Principles, Original Materials”
• Bram Hoex (UNSW Photovoltaic & Renewable Energy Engineering, Australia), “ALD Enabling High-Efficiency Solar Cells”
• Andrew Kummel (University of California, San Diego, USA), “Deposition of High Thermal Conductivity AlN Heat Spreader Films”
• Mark Losego (Georgia Tech, USA), “Vapor Phase Infiltration for Transforming Polymers into Organic Inorganic Hybrid Materials: Process Thermodynamics and Kinetics”
• Catherine Marichy (University Lyon, France), “ALD of BN for Membrane Application in Water Treatment”
• Miika Mattinen (Uhelsinki, Finland), “Exploring ALD 2D Chalcogenides Beyond MoS₂”
• Toshihide Nabatame (National Institute for Materials Science, Japan), “Study of ALD HfO₂-Based High-k for GaN Power Devices and Ferroelectric Devices”
• Nathanaelle Schneider (CNRS, France), “Tuning Properties of ALD Oxide and Sulfide Materials for Photovoltaic Applications”
• Mahdi Shirazi (Eindhoven, The Netherlands), “Atomistic Simulation of 2D-TMDs Growth by ALD”
• Henrik Soensteby (University of Oslo, Norway), “Low-temperature Epitaxy of Complex Oxides”
• Matthias Young (University of Missouri, USA), “From the Noise: Measuring Atomic Structure in Amorphous Thin Films Grown by Atomic Layer Deposition”

ALE On Demand Invited Speakers:

• Sumiko Fujisaki (Hitachi Ltd., Research & Development Group, Japan), “Thermal ALE of Co by Organometallic Complexes”
• Akiko Hirata (Sony Semiconductor Solutions Corp., Japan), “Highly Selective Atomic Layer Etching for Semiconductor Application”
• Anil Mane (Argonne National Lab, USA), “Novel Chemistries for Layer-by-Layer Etching of 2D Semiconductor Coatings and Organic-Inorganic Hybrid Materials”
• Gottlieb Oehrlein (University of Maryland, USA), “Achieving Selective Material Removal in Plasma-Based Atomic Layer Etching (ALE) of SiO₂”
• Simon Ruel (CEA-LETI, France), “GaN Damage Evaluation After Conventional Plasma Etching and Anisotropic Atomic Layer Etching”
• Andrew Teplyakov (University of Delaware, USA), “Mechanistic Insights into Thermal Dry Atomic Layer Processing of Metals”

Congratulations to the ALD 2020 Innovator Awardee Mikko Ritala, University of Helsinki, Finland

Congratulations to the following Student Awardees. Be sure to view their presentation recordings.

ALD 2020 Best Student Paper Awardee: 

• Jeff Schulpen (Eindhoven University of Technology‚ Netherlands), "Mixing It Up: Tuning Atomic Ordering in 2-D _Mo1-xWxS₂ Alloys"

ALD 2020 Student Finalists:

• Saba Ghafourisaleh (University of Helsinki‚ Finland), "Deposition of Conductive PEDOT Thin Films with EDOT and ReCl₅ Precursors"
• Mikhail Krishtab (KU Leuven/Imec‚ Belgium), "Resistless Lithography Based on Local Surface Modification of Halogenated Amorphous Carbon"
• Karina Ashurbekova (CIC nanoGUNE BRTA‚ Spain), "Mimicking Chitin and Chitosan Type of Functionality with Novel Thin Films Grown by Molecular Layer Deposition"

ALE 2020 Best Student Paper Awardee: 

• Nicholas Chittock (Eindhoven University of Technology, Netherlands), “Isotropic Plasma ALE of Al₂O₃ Using SF₆ Plasma and TMA” 

ALE  2020 Student Finalists:

• Gaëlle Antoun (GREMI Université d’Orléans/CNRS, France), “Cryo-ALE of SiO₂ with C₄F₈ Physisorption: Process Understanding and Enhancement” 
• Jessica Murdzek (University of Colorado – Boulder), “Thermal Atomic Layer Etching of Nickel Using SO₂Cl₂and P(CH₃)₃”
• Xia (Gary) Sang, University of California Los Angeles, “Thermal-Plasma ALE on Selected Metals for EUV and Integration Processes”
• David Zywotko (University of Colorado – Boulder), “Blocking Thermal Atomic Layer Etching with Removable Etch Stop Layers”

Submit a Manuscript by October 14 to the AVS Journal of Vacuum Science & Technology A (JVST A) Atomic Layer Deposition and Atomic Layer Etching Special Topic Collection. In addition JVST A awarded the JVST A 2019 Best ALD Paper Award to:

• Erika Maeda, Toshihide Nabatame, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, and Hajime Kiyono | JVST A 38, 032409 (2020), “Correlation Between SiO₂ Growth Rate and Difference in Electronegativity of Metal–Oxide Underlayers for Plasma Enhanced Atomic Layer Deposition Using Tris(dimethylamino)silane Precursor” 

Save the Date for ALD/ALE 2021 June 27-30, 2021 in Tampa, Florida > www.ald2021.avs.org

5th Annual CMC Conference, October 21-22, 2020

Worldwide Web Event on Critical Materials 5th Annual Event Will Happen in "Virtual Space"

 

Just announced - The Critical Materials Council (CMC) Conference Committee  is taking the 5th annual CMC Conference into the "WorldWideWeb!"  The 2020 event will be delivered "live" weaving worldwide-web services into a valuable digital experience, uniquely configured to give you the best in web-based networking. The 2-days of conference will include keynotes, presentations, roundtables, and poster sessions, so block your calendars for October 21-22 to attend this live event.      REGISTER TODAY! As an added incentive, attendees that register can choose to access CMC COVID-19 /Advisory Alert Workshops, featuring the most updated news on materials & markets.

 

This year's conference features powerful sessions focused on   critical materials used for Semiconductor Device Manufacturing including a new 4th session on Heterogeneous Integration using Packaging

 

FEATURED KEYNOTE: BRUCE TUFTS, VP OF TECHNOLOGY AND DIRECTOR OF FAB MATERIALS ORGANIZATION, INTEL CORP. presenting "Critical Materials Pushing the Limits for Semiconductor Manufacturing"   This 5th Annual Critical Materials Council (CMC) Conference provides: More than 25 powerful & actionable presentations, the popular Materials Action (TM)  roundtable session, a supplier Poster session, and vital networking opportunities.  and includes * Updates on market dynamics and regulations,   * Trends in the profitable control of all fab materials, and  * Technology forecasts for future critical materials.

 

Selected Speakers: Phil Hecker, WPL Supplier Quality Director, Texas Instruments   Superior Supplier Quality: Challenges in the Semiconductor Materials Supply-Chain Yuval Shaharabani, Director, Corporate Procurement, Raw Materials TowerJazz Semiconductors  Sulfuric Acid Concerns & Strategies Nedal T. Nassar PhD, Chief, Materials Flow Analysis, National Minerals Info Center, USGS Metals/Minerals Resources & Supply-Chain Risk Subramanian Iyer PhD, CHIPS Consortium Founder & UCLA Professor The Future of Si as a Packaging Material

 

Click here for full Agenda

 

EVENT DETAILS:

 

Sessions I & II, October 22nd Session III & IV, October 23rd   The conference follows the CMC Meeting (on October 20-21) and CMC Members only (Associates and Fabs) Joint Session (on October 21, 1-5pm). For more information about these meetings or the Conference, please contact Christine Yates by email here.

 

Register now at the Early Bird rate!   REGISTER TODAY!

 

Join our sponsors:

 

Samsung Leads Semiconductor Paradigm Shift with New Material Discovery : Amorphous Boron Nitride as Ultra Low-k

[Samsung Newsroom, LINK] Researchers at the Samsung Advanced Institute of Technology (SAIT) have unveiled the discovery of a new material, called amorphous boron nitride (a-BN), in collaboration with Ulsan National Institute of Science and Technology (UNIST) and the University of Cambridge. Published in the journal Nature, the study has the potential to accelerate the advent of the next generation of semiconductors.

2D Materials – The Key to Overcoming Scalability Challenges

Recently, SAIT has been working on the research and development of two-dimensional (2D) materials – crystalline materials with a single layer of atoms. Specifically, the institute has been working on the research and development of graphene, and has achieved groundbreaking research outcomes in this area such as the development of a new graphene transistor as well as a novel method of producing large-area, single-crystal wafer-scale graphene. In addition to researching and developing graphene, SAIT has been working to accelerate the material’s commercialization.

“To enhance the compatibility of graphene with silicon-based semiconductor processes, wafer-scale graphene growth on semiconductor substrates should be implemented at a temperature lower than 400°C.” said Hyeon-Jin Shin, a graphene project leader and Principal Researcher at SAIT. “We are also continuously working to expand the applications of graphene beyond semiconductors.”

Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics. (From Nature Publication,  LINK)

Amorphous boron nitride has a best-in-class ultra-low dielectric constant of 1.78 with strong electrical and mechanical properties, and can be used as an interconnect isolation material to minimize electrical interference. (Graphics: Samsung)

2D Material Transformed – Amorphous Boron Nitride

The newly discovered material, called amorphous boron nitride (a-BN), consists of boron and nitrogen atoms with an amorphous molecule structure. While amorphous boron nitride is derived from white graphene, which includes boron and nitrogen atoms arranged in a hexagonal structure, the molecular structure of a-BN in fact makes it uniquely distinctive from white graphene.

Amorphous boron nitride has a best-in-class ultra-low dielectric constant of 1.78 with strong electrical and mechanical properties, and can be used as an interconnect isolation material to minimize electrical interference. It was also demonstrated that the material can be grown on a wafer scale at a low temperature of just 400°C. Thus, amorphous boron nitride is expected to be widely applied to semiconductors such as DRAM and NAND solutions, and especially in next generation memory solutions for large-scale servers.

“Recently, interest in 2D materials and the new materials derived from them has been increasing. However, there are still many challenges in applying the materials to existing semiconductor processes.” said Seongjun Park, Vice President and Head of Inorganic Material Lab, SAIT. “We will continue to develop new materials to lead the semiconductor paradigm shift.”

Publication:

Ultralow-dielectric-constant amorphous boron nitride, Nature volume 582, pages511–514(2020) LINK

ALD Hafnium oxide as an enabler for competitive ferroelectric devices

Here is a new paper from NaMLab on ferroelectric hafnium oxide applications entitled "Hafnium oxide as an enabler for competitive ferroelectric devices"

Ferroelectric materials offer the promise to realize low power memory devices and show negative capacitance operation that could lead to novel electronic devices. Although intense research on realizing different memory device concepts based on three different readout schemes have been subject to intense research, the commercial success is limited to low density ferroelectric random access memories based on a direct capacitor readout. The complexity of integrating ferroelectric materials into CMOS processes has limited successful implementations. Ferroelectricity in hafnium oxide related material systems could overcome this limitations for memories and at the same time enable new devices based on negative capacitance.

IEEE: https://ieeexplore.ieee.org/document/9131618

Published in: 2020 IEEE Silicon Nanoelectronics Workshop (SNW)

New ALD chemistry for ultra-thin gas sensors

[Phys.org LINK] The application of zinc oxide layers in industry is manifold and ranges from the protection of degradable goods to the detection of toxic nitrogen oxide gas. Such layers can be deposited by atomic layer deposition (ALD) which employs typically chemical compounds, or simply precursors, which ignite immediately upon contact with air, i.e. are highly pyrophoric. An interdisciplinary research team at Ruhr-Universität Bochum (RUB) has now established a new fabrication process based on a non-pyrophoric zinc precursor that can be processed at temperatures low enough to allow plastics to be coated. The team published their report in the journal Small.

Lukas Mai – he is reflected in a thin film – and Anjana Devi. Credit: RUB, Marquard

More information: Lukas Mai et al. Zinc Oxide: From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications (Small 22/2020), Small (2020). DOI: 10.1002/smll.202070122

Save the date - AVS ALD & ALE 2021 June 27-30, 2021, Tampa, Florida

Save the Date June 27-30, 2021, Tampa, Florida

The AVS 21st International Conference on Atomic Layer Deposition (ALD 2021) featuring the 8th International Atomic Layer Etching Workshop (ALE 2021) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and now topics related to atomic layer etching. Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. This year, the ALD conference will again incorporate the Atomic Layer Etching 2021 Workshop (ALE 2021), so that attendees can interact freely. The conference will take place Sunday, June 27-Wednesday, June 30, 2021, at the JW Marriott Tampa Water Street in Tampa, Florida. As in past conferences, the meeting will be preceded (Sunday, June 27) by one day of tutorials and a welcome reception. Sessions will take place (Monday-Wednesday, June 28-30) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 800+.

Key Deadlines: Abstract Submission Deadline: February 3, 2021 Author Acceptance Notifications: March 16, 2021 Early Registration Deadline: May 14, 2021 Hotel Reservation Deadline: June 4, 2021 Manuscript Deadline: November 1, 2021

ALD/ALE 2021 Website

ALD Program Chairs   Program Chair: Sean Barry (Carlton University, Canada) Program Co-Chair: Scott Clendenning (Intel, USA)

ALE Program Chairs Program Chair: Jane Chang (University of California, Los Angeles, USA) Program Co-Chair: Thorsten Lill (Lam Research, USA)

AVS 2020 International Twitter Poster Competition

The American Vacuum Society (AVS) is excited to announce the AVS 2020 International Twitter Poster Competition, a new online venue to share your research with a global audience. We hope you will join us to disseminate your latest findings, connect with your research community, and meet new colleagues.


Registration deadline has been extended to July 6, 2020. And by popular demand, there are two new technical categories: Quantum Science (#AVS_Quantum) and Astrochemistry and Space Science (#AVS_Astrochem).

LINK: https://avs.swoogo.com/avs_posters