BRUTE Peroxide and BRUTE Hydrazine showcased in technical presentations
San Diego, Calif – July 13, 2017–RASIRC will announce the latest generation of its BRUTE Hydrazine product line at the annual ALD Conference held July 15-18, 2017 in Denver, Colorado. At low temperatures, ammonia or nitrogen plasmas cannot grow nitride ALD films on three dimensional, high aspect ratio (HAR) structures. BRUTE Hydrazine solves this problem and enables process engineers to incorporate nitrides into new device architectures.
RASIRC Chief Technology Officer Dan Alvarez will present “Low Resistivity Titanium Nitride ALD: Low Temperature Enabled by the Use of Ultra‐High Purity Hydrazine” on Tuesday July 18, at 1:45PM in Room Plaza F. Alvarez is a contributing author on another paper and two posters to be presented during the conference. RASIRC will also present the latest findings related to novel reactive chemistries for in-situ surface functionalization at Booth #16.
“The next generation of semiconductors require a new generation of precursors suited for low temperature, three dimensional deposition processes,” said Jeffrey Spiegelman, RASIRC President and Founder. “Our BRUTE chemistries meet these requirements, enabling surface functionalization, selective deposition, oxidation or nitridation without causing surface damage.”
“The next generation of semiconductors require a new generation of precursors suited for low temperature, three dimensional deposition processes,” said Jeffrey Spiegelman, RASIRC President and Founder. “Our BRUTE chemistries meet these requirements, enabling surface functionalization, selective deposition, oxidation or nitridation without causing surface damage.”