Breakthrough in indium oxide quality by atomic layer deposition by TU/e

As reported by Oxford Instruments: Researchers at the Eindhoven University of Technology (TU/e) have developed a novel approach to prepare TCOs consisting of H-doped indium oxide (In₂O₃:H) which are both highly conductive and highly transparent. Using an Oxford Instruments’ Atomic Layer Deposition (ALD) system, the team was able to prepare amorphous In₂O₃:H at 100 °C by ALD, followed by a brief solid phase crystallization step at 200 °C. In comparison to conventional sputtered Sn-doped indium oxide (ITO), the salient feature of the ALD In2O3:H process is the superior electron mobility (138 cm²/Vs), which simultaneously enables a lower resistivity (0.26 mΩ cm) and a negligible free carrier absorption in the infrared.

Research highlighted on cover of rapid research letters. Reference: Macco et al., Phys. Status Solidi RRL 8, No. 12, 987–990 (2014)

Oxford Instruments’ popular FlexAL® and OpAL® tools allow both the deposition of the amorphous indium oxide as well as the subsequent crystallization at modest temperatures of 150 to 200 °C. The high conductivity and high transparency, in conjunction with the low-temperature, soft processing, makes the presented approach especially promising for the application of the TCO in silicon heterojunction solar cells.

“Prof. Kessels and the Plasma and Materials Processing (PMP) group at TU/e continue to conduct exciting research using our ALD systems within new application areas”, said Oxford Instruments Plasma Technology’s ALD Product Manager, Chris Hodson, “This key technology advance is of real interest to the solar cell research community, and I’m certain our continuing collaboration with TU/e will bring additional advances in this and other technology areas.”

Erwin Kessels from Eindhoven University of Technology (TU/e) is spearheading efforts to translate smart nanotechnology inventions into economically viable industrial processes and products, for instance solar cells. Currently, most solar cells on the market are made up of crystalline silicon. While researchers have achieved more than 25 per cent energy conversion efficiency with this type of cell, the efficiency of commercially available solar cells, such as those lying on top of roofs, are so far only between 16 and 19 per cent. (Photo: Bart van Overbeeke. http://www.technologist.eu/erwin-kessels-pursuing-the-art-of-making/)

Prof. Kessels comments, “There is still a lot of potential for improving solar cells by thin films prepared by ALD, it is a very versatile technique yielding the highest quality films at low temperatures, without inducing damage, and with an unparalleled level of growth control. These are merits yielding opportunities for virtually all types of solar cells.”

Berenberg ziet sterk ASMI

ASM International zou dit jaar wel eens een zwak derde kwartaal kunnen boeken, maar dat is volgens analisten Tammy Qiu en Jean Beaubois van het Duitse Berenberg geen reden voor bezorgdheid. Het bedrijf waarschuwde zelf voor een zwakkere orderintake in het derde kwartaal. Maar de analisten van Berenberg schrijven dat dat 'puur komt door de timing van de orders'.

 

'Wij geloven niet dat het onderliggende verhaal van ASMI is veranderd', zeggen Qiu en Beaubois. Zij verwachten dat de toeleverancier van de halfgeleiderindustrie kan profiteren van sterke groei van de markt die gebruik maakt van een techniek die atomic layer deposition wordt genoemd. Berenberg geeft daarom een koopadvies voor ASMI.

Google Translate :

ASM International this year would ever be able to book a weak third quarter, but according to analysts Tammy Qiu and Jean Beaubois of the German Berenberg no reason for concern. The company warned itself for a weaker order intake in the third quarter. But analysts of Berenberg write that "purely because of the timing of orders.

"We do not believe that the underlying story of ASMI has changed," said Qiu and Beaubois. They expect the supplier to the semiconductor industry can benefit from strong growth in the market that uses a technique called atomic layer deposition. Berenberg therefore gives a buy recommendation for ASMI.

Please also read previous blog on the growth of the ALD market: http://baldengineering.blogspot.se/2015/04/fast-ald-growth-for-semiconductor.html

AVACO Receives Volume Production Order for PV Manufacturing Line from US Manufacturer

SAN JOSE, Calif.--(BUSINESS WIRE)--AVACO received additional volume order for PV manufacturing line that will be installed in China from one of the major solar manufacturer in the U.S. AVACO specializes in the manufacturing sputtering (PVD) vacuum deposition equipment, SuVAS™, and atomic Layer deposition (ALD) equipment AEON™. With the expertise in providing the turnkey manufacturing solution, AVACO boosts the PV market momentum.

"The result is in line with our milestone that we would receive additional volume production orders for photovoltaic manufacturing," stated Chuck Kim, AVACO's VP & GM, business development. "It is a major production win and a validation of our proven production technology.”


Leveraging the experience and strength in the mass production industry, AVACO surges at an accelerating pace during the past 24 months in the U.S. market development. AVACO expands its service to meet customers with contract manufacturing needs as well as custom designs in the U.S. Overall, the company has validated its technological capabilities with flexible services in the market with proven reliability, resulting in superior performance and further positioning itself as the technology of choice for leading edge automated manufacturing.

“Our core technology strengthens and broadens our offering of competency, enabling AVACO to continue to serve our customers with innovative and leading-edge solutions for thin film manufacturing challenges,” said Kim. 

AVACO is pleased to announce the participation in the Society of Vacuum Coater, 2015 SVC Techcon Exhibit, April 28 ~ 29, 2015 at Santa Clara Convention Center, Santa Clara, CA. For more information please visit us at our Booth #912, 2015 SVC Techcon Exhibit. Additional information can be found at our website at www.avaco.com.


AVACO Introduces New ALD Process System for Solar Cell:

http://www.businesswire.com/news/home/20131001005396/en/AVACO-Introduces-ALD-Process-System-Solar-Cell#.VUCAm5MuokM

Fast ALD Growth for the Semiconductor Equipment industry

There are reports on growth in the ALD industry coming in all the time. Here are two recent examples:

"Atomic Layer Deposition (ALD) ranks as the fastest growing market, driven by the increasing use of the technology in the production of electronic gadgets such as mobile phones, smartphones, PDAs, DVD players, portable media players, video games, home-theater systems, microwaves, and printers, among others." [Report]

"The analysts forecast the Global Atomic Layer Deposition market to grow at a CAGR of 36.10 percent over the period 2013-2018. One of the key factors contributing to this market growth is the growing demand for miniaturized components. The Global Atomic Layer Deposition market has also been witnessing the development of new atomic layer deposition materials. However, the slow deposition rate of atomic layer deposition could pose a challenge to the growth of this market." [Report]

That is why I think it is interesting to hear what these companies say in their earning calls. Bellow I collected some examples from ALD equipment companies. Clear is that growth in the semiconductor industry comes from:

• FinFET introduction at Foundries (SAMSUNG, TSMC and Globalfoundries)
• Multipple patterning for both logic and memory
• 3DNAND & DRAM as always

ASM International (2015 - 1Q Earnings Call, www.SeekingAlpha.com)

[...] The leading manufacturers have already ramped notable device generations based on our ALD and (PE)ALD products. For these industry leaders we have become strategic partners in the development of ALD and (PE)ALD technologies.

In a more recent periods we have also penetrated new customers with our ALD and (PE)ALD products. In 2014, we recorded a substantial first time revenue contribution from a number of these new customers as they began ramping ALD and (PE)ALD in high volume manufacturing. Including the tool record selections that we secured last year, we now supply our ALD and (PE)ALD products to all of the top 10 CapEx spenders in our industry. We will leave this successful growth of our customer base as well as our expansion to new ALD and (PE)ALD application demonstrates the competitiveness of our products.

As discussed during our last results conference call we expect our addressable product of the ALD and (PE)ALD market the single wafer and many batch [ph] part of that market to double over the next three to four years. And that is doubling compared to a baseline of more than US$600 million in 2014. Taking this three, four year horizon, we see a number of strong market drivers. In memory, we see a continue to growing need for advanced multiple patterning solutions. And as most listeners are probably where we have strong position with our PEALD technology for spacer defined double patterning. In the logic and foundry segments, the transition to FinFET devices will provide significant opportunities for the ALD and (PE)ALD market in general.

Over the next three to four years, we expected successful generations of FinFET devices will require a steady increase in a number of ALD and (PE)ALD process steps. This includes ALD and (PE)ALD process steps are rising from the expected to increase need for multiple patterning in advanced logic and foundry processes. The short prospects are our ALD markets in the coming years are strong and as a market leader, we believe we are well position to benefit.

In the memory market, the strength of last year has carried over to this year. Spending in memory in 2015 so far looks healthy, in DRAM on the 20-nanometer node and then NAND Flash on 18, 16-nanometer.

ASM International's (ASMI) CEO Chuck del Prado

Ultratech / Cambridge Nanotech (2015 - 1Q Earnings Call, www.SeekingAlpha.com)

The ALD product bookings also are showing increase trends and is included in our nano products bookings where they represent 7% of new system orders points. We’ve completed the second generation of the third LED batch production model the Phoenix 2G now all three products the Savannah, the Fiji and the Phoenix have been redesigned for better performance and reliability.

This now completes the transition of the ALD product line with all models shipped to customers around the world. We are currently projecting an increase in the ALD business for 2015.

Ultratech's (UTEK) CEO Arthur Zafiropoulo

MKS Instruments (2015 - 1Q Earnings Call, www.SeekingAlpha.com)

[...] Now let's turn to the core markets. I've spoken in earlier calls about our strategic initiative to capture additional opportunities in our core semiconductor business. The industry is facing several inflection points, including the shift from planar devices to 3D as well as the increased need for multi-patenting. As a result, the industry has adopted techniques which rely significantly on Etch and deposition steps to continue to shrink critical dimension. Industry analysts project that from 2014 to 2019, the number of Etch and deposition tools required will outpace the industry by more than 15% further creating opportunities for MKS to do our strong exposure to these process steps. For example, as critical dimensions continue to shrink to 20 nanometers and below conformal angstrom thick deposition is essential. Processes such as global CVD and atomic layer deposition or ALD are used to deposit these very thin layers. In ALD, oxidizing precursor is required for the process and ozone is a preferred oxidizer, since it provides a number of advantages and throughput and film quality.

 

MKS ozone systems are the industry standard, beating our competitors due to our quality, reliability and system performance and we continue to supply ozone systems for ALD for a leading Korean chip manufacturer. Additionally, MKS's next generation plasma products continue to be the positive choice in the latest CVD applications and will ramp along with a 16 nanometer node adoption in thin set applications. Hand-in-hand with depositing very thin films is the etching of minute features into them. Because the films are so thin, process control is critical.

 

 

MKS Instruments (MKSI) CEO Gerald Colella

LAM Research (2015 - 1Q Earnings Call, www.SeekingAlpha.com)

We are continuing to deliver the next generation of solutions that define the leading edge such as atomic layer deposition capability for applications such as spacer-based patterning schemes and atomic layer etch for high aspect ratio etch process steps.

These technologies have long suffered from under adoption in the industry because of productivity concerns, but Lam is now changing that paradigm with frequency of new product releases and engagements with customers that are designed to enable continued scaling for our customers.

As we move into calendar 2015, we will further emphasize by our actions the priority of staying close to our customer at a strategic and tactical level both, partnering with them on their technology introduction and ramp plans, sizing and allocating our R&D investments accordingly.

Operating expenses were flattish at $321 million. SG&A declined sequentially while R&D spending increased both in absolute dollars as well as a percentage of total operating expenses. We continue to invest in R&D programs to ensure we’re ready for the current as well as next set of technology inflections, which is critical to enable our revenue growth. This R&D spending is focused in areas like ALD and ALE which Martin referenced earlier.

Lam Research's (LRCX) CEO Martin Anstice

Welcome China, Russia, Ukraine and Sweden to The Best ALD Blog!

This has been a very interesting week on probably The Best ALD blog. First thing that happened after posing about a Russian ALD technology for ceramic super capacitors was that suddenly there was a lot of traffic from Russia and Ukraine. Usually these two countries are at no. 9 and 10 position in the traffic statistics. Then only 30 minutes after posting about a Chinese / US breakthrough on doping and un-doping graphene FETs by ALD China came in on the top 10 visitor statistics for the first time ever.

I am really happy of this development and my new goal will be to get new readers in South America and Africa. In Africa there is actually somebody reading the blog out of Algeria so that should be a good starting point for further expansion. Also for sure I am also happy to see all the Swedish readers that have found the blog since I moved to Sweden early this year - Välkomna!

Weekly statistics 19th 20 25th of April 2015 for The Best ALD Blog.

Chinese and US researchers dope & un-dope graphene FETs by ALD

Despite the tremendous world wide focus on the wonder material graphene, its pristine form can't be used in field-effect transistors (FETs) to replace current channel materials (Si, SiGe, III/V) between the source and drain suffer from the absence of a bandgap.

Here reseraches are seeking  to chemically modify or dope grapheneto open up a  band gap in the material. However, the carbon atoms in graphene are arranged in a two-dimensional sp² hybridization surface, which makes it almost impossible to induce any chemical modification or doping without alteration of its idealized properties.

Finally, in order to form a super fast CMOS logic based on ultra fast graphene FETs (GFET) you need to be able to dope the GFETs in to NMOS and PMOS transistores and it has been proven very difficult to produce a stable n-type graphene transistors than its p-type counterpart.

A team of Chinese and US researchers [1, 2, 3, 4] have developed a simple method to produce n-type doping of graphene by using an ALD chamber. That is not all - the mechanism is reversible, meaning they can bring back graphene to p-type by a thermal anneal step. The main mechanism of n-type doping is driven by a surface charge transfer at graphene/redox interfaces during the ALD processing of Al2O3. Fantastic - Check out the details in the publication below!


Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism
Li Zheng, Xinhong Cheng, Zhongjian Wang, Chao Xia, Duo Cao, Lingyan Shen, Qian Wang, Yuehui Yu, and Dashen Shen
J. Phys. Chem. C, 2015, 119 (11), pp 5995–6000
DOI: 10.1021/jp511562t

The pre-H2O treatment and Al2O3 film growth under a two-temperature-regime mode in an oxygen-deficient atomic layer deposition (ALD) chamber can induce n-type doping of graphene, with the enhancement of electron mobility and no defect introduction to graphene. The main mechanism of n-type doping is surface charge transfer at graphene/redox interfaces during the ALD procedure. More interestingly, this n-type doping of graphene is reversible and can be recovered by thermal annealing, similar to hydrogenated graphene (graphane). This technique utilizing pre-H2O treatment and an encapsulated layer of Al2O3 achieved in an oxygen-deficient ALD chamber provides a simple and novel route to fabricate n-type doping of graphene. (From grapfical abstract J. Phys. Chem. C, 2015, 119 (11), pp 5995–6000)

[1] State Key Laboratory of Functional Materials for Informatics
[2] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
[3] University of Chinese Academy of Sciences, Beijing 100049, China
[4] University of Alabama in Huntsville, Huntsville, Alabama 35899, United States
 

DTU & ITMO present ultracompact all-dielectric refractive index sensors by ALD

A new type of ultracompact all-dielectric refractive index sensors with much lower losses compared to plasmonics-based sensors fabricated by ALD has been published recnetly by DTU - Technical University of Denmark and ITMO University St Petersburg. The presented results will be useful for ellipsometric characterization of multilayer stacks, as well as for a variety of sensing applications.

Nanotechweb reports: Surprising optical properties of ultra-thin dielectric multilayer films

Ultra-thin dielectric films could act as a new type of chemical sensor. This is thanks to a minute variation in layer thickness and ordering on the light reflection in a very narrow range of incident angles. Surprisingly, this new discovery reported in Nanotechnology has a high influence. The same sensitivity can be utilized for the in-situ monitoring of multilayer deposition and for the development of new high-precision models for ellipsometry.
 

Anomalous effective medium approximation breakdown in deeply subwavelength all-dielectric photonic multilayers FREE ARTICLE Focus on Nanophotonics

Andrei Andryieuski1, Andrei V Lavrinenko1 and Sergei V Zhukovsky1,2

1 DTU Fotonik, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby, 2800 Denmark
2 ITMO University, Kronverkskiy pr. 49, St. Petersburg, 197101 Russia
Andrei Andryieuski et al 2015 Nanotechnology 26 184001
doi:10.1088/0957-4484/26/18/184001

 

We present a comprehensive analysis of the applicability of the effective medium approximation to deeply subwavelength (period all-dielectric multilayer structures. We demonstrate that even though the dispersion relations for such multilayers differ from the effective medium prediction only slightly, there can be regimes when an actual multilayer stack exhibits significantly different properties compared to its homogenized model. In particular, reflection near the critical angle is shown to strongly depend on even very small period variations, as well as on the choice of the multilayer termination. We identify the geometries for which the influence of the subwavelength features is maximized and demonstrate that the difference between the reflectance from the actual multilayer and the effective medium prediction can be as great as 0.98. The results of this analysis can be useful for high-precision multilayer ellipsometry and in sensing applications.

 

Figure 6 from Anomalous effective medium approximation breakdown in deeply subwavelength all-dielectric photonic multilayers (Andrei Andryieuski et al 2015 Nanotechnology 26)

 

ALD Nanosolutions and Meaglow Development Partnership

As reported by ALD Pulse: THUNDER BAY, ONTARIO–(April 21, 2015) - ALD NanoSolutions and Meaglow are pleased to announce an exclusive partnership for the development and marketing of hollow cathode plasma sources uniquely suited for atomic layer deposition onto particles. An ALD NanoSolutions particle reactor combined with a Meaglow plasma source allows newly developed plasma ALD chemistries to be performed onto particles in appreciable quantities. This expanded capability enables development of new materials and their eventual commercialization. “When you’re coating hundreds of grams of powder, ALD product gases significantly change the gas composition, requiring a robust remote plasma source,” says Joe Spencer, Director of Operations at ALD NanoSolutions. “The Meaglow hollow cathode plasma source strikes easily in a very wide pressure range that gives us a lot of versatility.”

 

“When I think of hi-tech materials, I think of ALD NanoSolutions, who I know to be doing some incredibly innovative things with powders. Apart from being very robust, I think the Meaglow hollow cathode plasma source will bring the advantages of less plasma damage, higher growth per cycle, and minimized oxygen contamination for nitrides. We’re incredibly pleased to see our plasma source being mated to ALD NanoSolutions’ reactor systems,” says Scott Butcher, Chief Scientist of Meaglow Ltd

About Meaglow Ltd.

Meaglow Ltd. produces a new range of epitaxy equipment, including custom built hollow cathode plasma sources for ALD equipment and other applications. These next generation plasma sources have been shown to provide lower oxygen and higher growth rates in many situations.

About ALD NanoSolutions

At ALD NanoSolutions, we bring the future of nanotechnology to the present. From new forms of lighting to advanced lithium-ion batteries, we are working with Fortune 100 companies to vastly improve their current products in an economically and environmentally sustainable way. We currently offer a large portfolio of technical expertise including tolling runs, licensing and equipment. Our mission is to accelerate the commercial success of a wide range of industries by delivering our superior material solutions based on our proprietary nanocoating platform. Further information about ALD NanoSolutions is available at www.aldnanosolutions.com.

Source: www.meaglow.com

Iridium Tantalum oxide based Resistive RAM from Panasonic

This is pretty cool for anybody who has been working with high-k for whatever application. More than 10 years ago there was focused research and development by many on high-k materials for logic, memory and capacitor applications and tantalum oxide was one of the contenders. Then two things happened Samsung went with a hafnium oxide based dielectric for their 90 nm DRAM (MIS stack) in 2004/2005 and Intel later introduced a hafnium oxide based HKMG technology for 45 nm logic in 2007. Since then it has been pretty boring looking at reverse engineering reports like the one below - always the same theme hafnium oxide and zirconium oxide, which due to the bloody lanthanide contraction is basically the same thing. That is why I was so happy to find this one a tantalum oxide based stack in a product for an emerging memory technology! Yay - Tantalum is back! I say back since STMicroelectronics had it all figured out already in 2003 in their Ta2O5 based 3D MIM capacitors and one of the earliest(?) patents on using ALD Ta2O5 in a MIM capacitor was granted in 1992(!) for VTT, Finland. Finally, not to forget the important of the metal electrode and metal in general the total awesomeness of using Iridium top electrodes in the case reported below! Just imagine how irritating this must be for Ruthenium.

The first High-k Ta2O5 MIM application patented 1992(!) and presented by VTT, Finland at SEMICON Europa in 1999. Slide as as given in the presentation "High-k fur Alle"

Introduction of High-k as given in the presentation "High-k fur Alle"

The resistive RAM (ReRAM) product of Panasonic has been investigated by TechInsights examines. The microcontroller (MN101LR series) is fabricated at Panasonic’s former Tonami fab using a 180nm CMOS process. As reported in EE Times:

"The Tonami fab is now operated as a joint venture with TowerJazz. Panasonic uses a binary transition metal oxide (tantalum oxide) as a variable resistance layer sandwiched between an upper electrode (iridium) and a lower electrode (tantalum based electrode). Panasonic’s ‘319 patent further describes the tantalum oxide as having two sub-layers[5], where a bottom tantalum oxide layer is formed by the reactive sputtering process of a Ta target to form an oxygen deficient layer (TaO1.43). This deposited tantalum oxide then undergoes an oxidation process to increase the oxygen content of its upper surface to form TaO2.45, which is close to the stoichiometric Ta2O5."

Panasonic ReRAM cell. (EETimes / TECHINSIGHTS)

This article also showcases details on the ADESTO CBRAM technolgy based on Silver and germanium sulfide, which are both unusual materials for a semiconductor fab. Possibly less of a problem for a fabless business model like ADESTO is using.

Picosun ALD Protects Printed Circuit Boards

Picosun Oy, the leading provider of high quality Atomic Layer Deposition (ALD) equipment and solutions for global industries develops a novel, production-scale method for printed circuit board protection for various industrial customers. The development is being carried out under a contract with the European Space Agency (ESA).

Reliability of electrical components is of vital importance in aerospace industries. Consumer products suffer as well from the degrading performance of control electronics, especially failures in the printed circuit boards (PCBs) housing the components. Picosun’s ALD technology offers efficient protection of the PCBs with dense, tight, uniform, and conformal encapsulating coatings preventing the most typical performance-degrading phenomena, for example tin whiskering. The now developed protection method will find its applications not only in space, aviation, and other high-end products but in everyday items such as mobile phones, computers, cars, household machinery, and entertainment electronics.

“We at Picosun are excited to extend our ALD expertise to this important new application area. There is a huge demand for improved methods for PCB protection and the global market is enormous. Our industrial-scale P-series ALD systems are ideal for fast, reliable, and cost-efficient processing of even large PCB structures in optimized batch configuration, offering unparalleled competitive edge and added value to global PCB manufacturers,” states Juhana Kostamo, Managing Director of Picosun.