Showing posts with label Meaglow. Show all posts
Showing posts with label Meaglow. Show all posts

Wednesday, December 8, 2021

Meaglow Hollow Cathode Gas Plasma Source Paper Published by the Journal “Coatings”

Meaglow technical staff have published a paper entitled: “Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD — Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes” in the journal “Coatings”. An early version of the paper can be accessed at the journal website, here.

The paper provides a brief review of oxygen contamination from ICP and microwave legacy sources, but also provides details of the operation of the hollow cathode gas plasma sources now widely used by the ALD community.

Wednesday, February 12, 2020

50th Hollow Cathode Gas Plasma Source Ordered from Meaglow Ltd

THUNDER BAY, Ontario--(BUSINESS WIRE)--In the semiconductor industry, hollow cathodes are best known for their application as sputter sources, however an increasingly successful range of gas plasma sources have been built by Meaglow Ltd for application in plasma enhanced atomic layer deposition (PE-ALD) and plasma enhanced chemical vapour deposition (PE-CVD). In the past, thin non-oxide films grown by PE-ALD had suffered from severe oxygen contamination problems, a problem that is largely solved with Meaglow’s hollow cathodes, which have the other advantages of high radical flux, low ion damage, and scalability. Meaglow has made several large area sources, in fact, the new order that pushes past the 50th plasma source is for three 4” diameter sources and an 8” diameter source for the OEM Okyay Tech ( who will use the sources in some of their upcoming ALD equipment builds. Meaglow has also built 12” diameter sources for other customers.

“We believe Meaglow’s designs represent the first successful, wide spread, application of hollow cathode gas sources for thin film deposition,” says Dr. Scott Butcher, Chief Scientist of Meaglow Ltd. “Past designs struggled with uniform plasma distribution, a problem which Meaglow has overcome.” Dr Butcher’s early exposure to radiofrequency hollow cathode technology, back in the 1990s, was a good fit for solving some of the problems faced by our PE-ALD customers. Now our technology can be found in ten countries, and our customers have published over forty related journal papers, most of which are listed on our website.

About Meaglow Ltd.
Meaglow Ltd. Is a privately owned corporation in the industrial city of Thunder Bay, Canada. It’s range of next generation hollow cathode plasma sources is transforming the way plasma deposition is done.

Monday, April 8, 2019

Meaglows New Hollow Cathode Plasma Source Designs Provide Better Quality Films

The University of Connecticut group of Dr. Necmi Biyikli, with others, have recently published a paper (J. Vac. Sci. and Technol. A 37 (2019) 020927) where they were able to achieve good quality, highly stoichiometric AlN using hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) with film densities near bulk values. Because of the high radical flux from the source, significantly lower RF power was required to achieve this improvement in material quality compared to past experience, and shorter plasma on cycles could be used at these lower powers (20 seconds at 100 watts compared to 40 seconds at 300 watts).

0.125 sec exposure 278 watt 4130 mTorr

Similar improvements in silicon nitride deposition were recently achieved by a team at the University of Texas, Dallas, where excellent quality, highly stoichiometric, high-density PA-ALD grown material was performed using one of our hollow cathode plasma sources (see, for instance, IEEE Electron Device Letters 39 (2018) 1195 ).


The image shows the University of Connecticut plasma source with ellipsometer ports and sample entry door. The 4″ diameter source was custom made for use with an Okyay Tech ALD system.

Meaglow’s hollow cathode plasma sources are widely used by the ALD Research Community as replacements for inductively coupled plasma (ICP) sources because there is less oxygen contamination when depositing non-oxide materials. However, these recent papers, by the University of Connecticut and the University of Texas, Dallas, illustrate advantages that may be far more important for the industry moving forward. Those being an extremely high radical flux, to the point where the ion signal (ion densities are similar to ICP sources) is swamped by the signal of radicals during optical emission spectroscopy measurements, and relatively low plasma damage (see our company white paper on hollow cathode sources). These result in quicker deposition times with potentially more stoichiometric, better quality material.

Thursday, August 9, 2018

Meaglow Introduces its Hollow Cathode Plasma Sources to Four New Countries

While ALD2018 was going on in Incheon, South Korea, the first Meaglow hollow cathode plasma source in South Korea was being installed at Hanyang University in Ansan.

This is one of a number of firsts for Meaglow this year, we’ve also had our first sale to Israel (to Ben-Gurion University of the Negev), our first sale to Gerrmany (to Otto-von-Guericke University, Magdeburg) and our first sale to the United Kingdom (to the University of Liverpool). All of these sales have been for Meaglow’s popular Series 50 Plasma Source, which is used by many of our customers to upgrade from ICP to hollow cathode plasma operation.

Contact us at to learn more about the benefits of Meaglow’s plasma technology.

Monday, January 2, 2017

Gallium nitride thin-film transistors produced in 200°C process by hollow cathode PEALD

Hollow cathode plasma sources, are an alternative to ICP and CCP sources and has been successfully introduced for PEALD by Meaglow Ltd. Semiconductor Today reports: Bilkent University in Turkey has developed a low-temperature process to create gallium nitride (GaN) back-gated thin-film transistors (TFTs) on flexible and rigid substrates [S. Bolat et al, Appl. Phys. Lett., vol 109, p233504, 2016]. The team reports that the "overall fabrication thermal budget is below 200°C, the lowest reported for the GaN-based transistors so far." 

According to the article in Applied Physics Letters, the GaN thin films were grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C using the popular Ultratech Cambridge Nantech Fiji PEALD system equipped with an HCP source from Meaglow. 

More information on can be found here: