Showing posts with label MRAM. Show all posts
Showing posts with label MRAM. Show all posts

Thursday, November 25, 2021

Watch again - Material development for MRAM and FRAM stacks at Fraunhofer IPMS-CNT

Material development for MRAM and FRAM stacks

Dr. Lukas Gerlich & Konrad Seidel (Fraunhofer IPMS - Center Nanoelectronic Technologies)

Today, data is the lifeblood disrupting many industries. The vast majority of this data is stored in the form of non-volatile magnetic bits in hard disk drives. This technology was developed more than half a century ago and has reached fundamental scaling limits that prevent further increases in storage capacity. New approaches are needed.

In the webinar, FRAM (Ferroelectric Random Access Memory) and MRAM (Magnetoresistive Random Access Memory) will be presented as two promising concepts for future ultra-low power memory technologies. Special attention will be paid to material development and fabrication on state-of-the-art industrial equipment for 300 mm wafers.

Previous Webinar: Fe- FET - A Memory Device for Maximum Integration, Konrad Seidel (IoT Components and Systems) Webinars - Fraunhofer IPMS

Tuesday, July 16, 2019

Endura Impulse - Applied Materials’ New Memory Machines

Tools designed to rapidly build embedded MRAM, RRAM, and phase change memories on logic chips expand foundry options

Applied Materials unveiled Endura Impulse System incorporating nine physical vapor deposition reactors to rapidly build STT-MRAM, RRAM or PCRAM, on 9 July at Semicon West, in San Francisco.
Chip equipment giant Applied Materials wants foundry companies to know that it feels their pain. Continuing down the traditional Moore's Law path of increasing the density of transistors on a chip is too expensive for all but the three richest players—Intel, Samsung, and TSMC. So to keep the customers coming, other foundries can instead add new features, such as the ability to embed new non-volatile memories—RRAM, phase change memory, and MRAM—right on the processor. 
The trouble is, those are really hard things to make at scale. So, Applied has invented a pair of machines that boost throughput by more than an order of magnitude.

Applied Materials' Endura Impulse uses nine physical vapor deposition systems to rapidly build RRAM or PCRAM. Photo: Applied Materials 
Source: Applied Materials LINK
By Abhishekkumkar Thakur 

Thursday, July 4, 2019

Integrated Process Monitoring for New Memories (MRAM, PCRAM, ReRAM) by Applied Materials

[Applied Materials] For new memories to reach high-volume manufacturing, the industry must enable new process control solutions says Applied’s Niranjan Khasgiwale. Read his latest blog to find out what’s driving the need for new metrology techniques.

Applied Materials: LINK 


Tuesday, November 13, 2018

Spin Memory Teams With Applied Materials to Produce a Comprehensive Embedded MRAM Solution

FREMONT, Calif. — Spin Memory, Inc. (Spin Memory), the leading MRAM developer, today announced a commercial agreement with Applied Materials, Inc. (Applied) to create a comprehensive embedded MRAM solution. The solution brings together Applied’s industry-leading deposition and etch capabilities with Spin Memory’s MRAM process IP.

Key elements of the offering include Applied innovations in PVD and etch process technology, Spin Memory’s revolutionary Precessional Spin CurrentTM (PSCTM) structure (also known as the Spin Polarizer), and industry-leading perpendicular magnetic tunnel junction (pMTJ) technology from both companies. The solution is designed to allow customers to quickly bring up an embedded MRAM manufacturing module and start producing world-class MRAM-enabled products for both non-volatile (flash-like) and SRAM-replacement applications. Spin Memory intends to make the solution commercially available from 2019.

“In the AI and IoT era, the industry needs high-speed, area-efficient non-volatile memory like never before,” said Tom Sparkman, CEO at Spin Memory. “Through our collaboration with Applied Materials, we will bring the next generation of STT-MRAM to market and address this growing need for alternative memory solutions.”

“Our industry is driving a new wave of computing that will result in billions of sensors and a dramatic increase in data generation,” said Steve Ghanayem, senior vice president of New Markets and Alliances at Applied Materials. “As a result, we are seeing a renaissance in hardware innovation, from materials to systems, and we are excited to be teaming up with Spin Memory to help accelerate the availability of a new memory.”
About the PSC

Sunday, May 18, 2014

Emerging memory taxonomy according to ITRS 2013

For all of you working on emerging memory technologies such as ReRAM, FeRAM, PCM, MRAM etc. this classification scheme in the latest ITRS roadmap should be very useful. Please check out the  ERD - Emerging Research Devices Chapter.

"Figure ERD3 [inserted below] provides a simple visual method of categorizing memory technologies. At the highest level, memory technologies are separated by the ability to retain data without power. Nonvolatile memory offers essential use advantages, and the degree to which non-volatility exists is measured in terms of the length of time that data can be expected to be retained. Volatile memories also have a characteristic retention time that can vary from milliseconds to (for practical purposes) the length of time that power remains on. Nonvolatile memory technologies are further categorized by their maturity. Flash memory is considered the baseline nonvolatile memory because it is highly mature, well optimized, and has a significant commercial presence. Flash memory is the benchmark against which prototypical and emerging nonvolatile memory technologies are measured. Prototypical memory technologies are at a point of maturity where they are commercially available (generally for niche applications), and have a large scientific, technological, and systematic knowledge base available in the literature. These prototypical technologies are covered in Table ERD2 and in the PIDS Chapter. The focus of this section is Emerging Memory Technologies. These are the least mature memory technologies in Fig. ERD4, but have been shown to offer significant potential benefits if various scientific and technological hurdles can be overcome. This section provides an overview of these emerging technologies, their potential benefits, and the key research challenges that will allow them to become viable commercial technologies."

Figure ERD3, from the ERD Chapter 2013 - Emerging memory taxonomy (ITRS 2013, Chapter ERD
If you continue to read from page 8 on you will find a short description of all emerging memory technologies that are being considered by he ITRS. If you´re saturated on resistive technologies you can fast forward to page 12 and read about the new contender FeFET :-)