Friday, February 3, 2023

A True Pioneer of ALD Research with Jeffrey Elam – ALD Stories

Tyler is joined by Dr. Jeffrey Elam from Argonne National Lab in Chicago. Jeff is the head of the Atomic Layer Deposition research program at Argonne and has received numerous awards, accolades and patents for his work, the ALD Innovator Award and Lifetime Achievement Award at Argonne as examples. 

In this episode, Tyler and Jeff discuss his time as a post doc in the Steven George lab where he built the first ALD reactors, how he began the ALD group at Argonne, and some of his award-winning work on fabricating large-area microchannel plates.

Thursday, February 2, 2023

Dutch ALD euipment leader ASM to invest $100 mil. in Korea for facility expansion

Korea’s industry ministry said Thursday it agreed with Dutch semiconductor equipment supplier ASM to boost cooperation for the firm’s planned investment of $100 million to build a production factory and a research and development center in Korea.

The two sides signed a memorandum of understanding (MOU) in Seoul on the day, which calls for joint work for the smooth implementation of the corporate investment worth $100 million through 2025, according to the Ministry of Trade, Industry and Energy.

The company is reviewing building a second factory that produces equipment for atomic layer deposition, a key process in chips manufacturing, and the expansion of its RD center in Korea.

Currently, ASM is headquartered in the city of Hwaseong, Gyeonggi Province, some 40 kilometers south of Seoul.

In October, ASM announced a plan to invest $100 million in Korea, but the amount has surged “as discussions between the two sides have developed,” a ministry official said.

Following the MOU signing ceremony, Industry Minister Lee Chang-yang and ASM CEO Benjamin Loh held a meeting for discussions on the envisioned expansion of bilateral cooperation.

“The investment is expected to help Korea better ensure stable supply chains of the sector and boost exports,” the ministry said in a release. “The government will actively extend support, such as providing incentives and resolving difficulties.” (Yonhap)

Source: Dutch chip firm ASM to invest $100 mil. in Korea for facility expansion

Wednesday, February 1, 2023

Asking the AI powered ChatGPT some simple questions

I have been asking the AI powered ChatGPT some simple questions - what do you think? Is there a better way to explain ALD and ALE in a simple way? I like the ALE answer more than the ALD answer.

So I reiterated and asked ChatGPT to give a very simple answer for ALD, which I like a bit more. I would probably swap electronics for semiconductor, which I did using the teaching function :-) 

Tuesday, January 17, 2023

Thermal Atomic Layer Deposition of Gold

Summary: We successfully developed the first reductive thermal ALD process for elemental gold using AuCl(PEt3) and (Me3Ge)2DHP as precursors. Highly conductive and pure gold films could be deposited at moderate temperatures of 160–180 °C. The process was proven to work on multiple substrates, although with a clear difference in nucleation that was the most favorable on a Ru surface and the least favorable on Al2O3. Furthermore, the reaction mechanism was studied and found to proceed stepwise, as expected based on the literature. The combination of high growth rate and purity of the films shows potential for many applications and furthermore proves the capabilities of the recently discovered reducing agent, (Me3Ge)2DHP.

Reductive Thermal Atomic Layer Deposition Process for Gold

Anton Vihervaara, Timo Hatanpää, Heta-Elisa Nieminen, Kenichiro Mizohata, Mykhailo Chundak, Mikko Ritala*
ACS Mater. Au 2023, XXXX, XXX, XXX-XXX
Publication Date:January 11, 2023

In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro(triethylphosphine)gold(I) [AuCl(PEt3)] and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after the film reaches full coverage. The films have a very low resistivity close to the bulk value, and a minimal amount of impurities could be detected. The reaction mechanism of the process is studied in situ with a quartz crystal microbalance and a quadrupole mass spectrometer.

Monday, January 9, 2023

Xiaomi Redmi Note 12 Pro Plus 5G use ALD coating to avoid flare and ghosting under bright light

The Note 12 Pro Plus is using Samsung’s new 1/1.4-inch HPX sensor mated to a 7P lens system with f/1.65 aperture and optical image stabilisation. Xiaomi says it is also using an atomic layer deposition (ALD) coating on this lens to minimise flare and ghosting, a common issue for smartphone cameras— including the very recent iPhones— under bright light.

The 200MP camera is paired to an 8MP ultrawide and 2MP macro. (Photo credit: Saurabh Singh/Financial Express)