Problem solved - In0.5Ga0.5N layers by Atomic Layer Deposition!

Pedersen Group at Linköping University, Sweden, present an ALD approach to metastable In1-xGaxN with 0.1 < x < 0.5 based on solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In0.5Ga0.5N film with a bandgap of 1.94 eV was achieved on Si (100) substrate. Epitaxial In1-xGaxN (0002) was successfully grown directly on 4H-SiC (0001).

In0.5Ga0.5N layers by Atomic Layer Deposition
P. Rouf, J. Palisaitis, B. Bakhit, N. J. O'Brien and H. Pedersen, J. Mater. Chem. C, 2021, DOI: 10.1039/D1TC02408F. (LINK)

a) Cross-sectional STEM-HAADF image of the ~60 nm In1-xGaxN film on 4H-SiC substrate with a zoomed in image of the b) In82Ga18N and c) In18Ga82N layers. d) SAED pattern from the film and substrate. EDX maps of Ga e), In f) and Si g). EELS maps of N h) and C i).