Tuesday, February 28, 2017

Substrate selectivity in the low temperature ALD of cobalt metal films

Cobalt metal films have increasing importance as magnetic materials, precursors to CoSi2 contacts, liners and encapsulation of copper vias an lines in interconetc, and possibly even as copper replacement conductors know as Cobalt fill. Here Wayne State, UT Dallas and former SAFC HiTech now EMD Performance Materials of MERCK publish an important paper on selective Co ALD at low temperature using bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic.

Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid

The Journal of Chemical Physics 146, 052813 (2017); doi: http://dx.doi.org/10.1063/1.4968848

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