Saturday, February 25, 2017

Picosun and Hitachi MECRALD Process

Here are more details on the Picosun and Hitachi MECRALD Process in a recent article in Solid State Technology:  A new microwave electron cyclotron resonance (MECR) atomic layer deposition (ALD) process technology has been co-developed by Hitachi High-Technologies Corporation and Picosun Oy to provide commercial semiconductor IC fabs with the ability to form dielectric films at lower temperatures. Silicon oxide and silicon nitride, aluminum oxide and aluminum nitride films have been deposited in the temperature range of 150-200 degrees C in the new 300-mm single-wafer plasma-enhanced ALD (PEALD) processing chamber.
Cross-sectional schematic of a new Microwave Electron Cyclotron Resonance (MECR) plasma source from Hitachi High-Technologies connected to a single-wafer Atomic Layer Deposition (ALD) processing chamber from Picosun. (Source: Picosun)
By Ed Korczynski, Sr. Technical Editor
Full article: LINK 
 MECRALD online video (