Friday, July 22, 2016

Lund Nano Lab to present new maskless technology for nano device patterning at ALE 2016 Ireland

Semiconductor device scaling requires atomic level precision processing and Atomic Layer Etching (ALE) has a great potential for this. ALE is a cyclic etching process in which a well-defined atomically thin layer is etched in each cycle. [HERALD White Paper on Atomic Level Processing]

Lund Nano Lab at NanoLund, Lund University to present new maskless technology for nano device patterning at ALE 2016 Ireland. Here you can have a preview and we welcome all of you to enjoy the opening pleanary talk by Prof. Lars Samuelson and later the contributed talk by Dr. Dmitry Suyatin in the ALE Workshop. Later you may also want to come and stop by and visit us in the Exhibition at the joint stand NanoLund and ALD Lab Saxony - table 45 right next to the coffee.

Nanowire-based Technologies for Electronics, LEDs and Solar-cells
Lars Samuelson
Lund University, Sweden
08:30-09:00



Dr. Dmitry Suyatin from Lund university presenting initial groundbreaking work on splitting Nanowires by ALE at the Novel High-k Workshop in Dresden 2016. At ALE 2016 more details will be revealed.


Longitudinal nanowire splitting by atomic layer etching
DMITRY B. SUYATIN*, MD SABBIR AHMED KHAN, JONAS SUNDQVIST, ANDERS KVENNEFORS, MARIUSZ GRACZYK, NICKLAS NILSSON, IVAN MAXIMOV
Lund University, Sweden
13:45-14:00



Invention

We provide an ALE-based maskless method of manufacturing nanostructures with characteristic size below 20 nm

Offer

  • IP & licencing 
  • ALE Process development 
  • Device fabrication 
  • Process transfer