Friday, July 22, 2016

KAUST showcase Indium-Free Fully Transparent Electronics Deposited Entirely by ALD

Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia has come up with a process to fabricate Indium-Free Fully Transparent Electronics Deposited Entirely by ALD. Below is the abstract fro the paper published recently in Advanced Materials.

Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Pradipta K. Nayak, Zhenwei Wang and Husam N. Alshareef
Version of Record online: 4 JUL 2016



Abstract:


Indium-free, fully transparent thin-film transistors are fabricated entirely by atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.

Here is the ALD process flow for a fully transparent TFT display published accordingly in the Supporting Information that is free for download.