Thursday, February 18, 2016

RASIRC's water-free anhydrous hydrogen peroxide technology for ALD

Next week we at ALD Lab Dresden will meet up with Jeff Spiegelman, Founder and President of RASIRC to discuss some new technologies for delivery of difficult to deliver ALD co reactants. I am now happy to see the product release of the Brute Peroxide H2O2 (see press release below) is here. We had an early version of this on an ASM Pulsar 3000 some time ago here in Dresden. As you can see in the picture below the design you can fit this unit into basically any ALD gas box on the market  and just like that you have access to highly concentrated H2O2 - clever design indeed!



RASIRC released research results showing that anhydrous hydrogen peroxide gas enables a five-fold increase in surface hydroxyl density when compared to water in studies involving ALD nucleation on SiGe substrates. Hydroxyl density is an important factor in minimizing interfacial defects, increasing uniformity and improving next generation semiconductor device performance. BRUTE Peroxide provides a stable, reliable flow of anhydrous hydrogen peroxide for atomic layer deposition (ALD) and atomic layer etch (ALE). RASIRC products generate specialty gases from liquid sources to meet the demands of next generation semiconductor manufacturing.


BRUTE Peroxide generates water-free hydrogen peroxide gas and can be used with or without a carrier gas. Precursors that previously needed high temperatures or failed to grow uniform films with ozone, plasma, or water now have a new partner molecule for oxide film growth. BRUTE Peroxide is the only commercially available technology that can deliver up to 99.9% H2O2 gas by volume. Traditional H2O2 vaporizers, on the other hand, deliver less than 1% H2O2 gas by volume from standard H2O2 liquid source. (www.rasirc.com)


Next-generation devices are moving from Silicon to Silicon-Germanium Channels. It is critical to form a stable uniform oxides without Si or Ge dangling bonds on the interface grown by ALD at low temperatures. “Research proves conclusively that the presence of water in some ALD and ALE processes negatively affects interfacial layer uniformity, leading to higher defect density, slower initiation, and degraded performance,” said Jeffrey Spiegelman, RASIRC President and Founder. “Tests of BRUTE hydrogen peroxide confirm that removing the water during processing with dry H2O2 enabled a three-fold improvement in hydroxyl density compared to 30 percent H2O2 and water source.”

Full report: http://www.rasirc.com/news/releases/160216-RASIRC-Anhydrous-Hydrogen-Peroxide.htm