Sunday, February 21, 2016

AVS Journal of Vacuum Science and Technology Recognizes Dr. Kaupo Kukli as One of its Most Valuable Reviewers (MVR)

AVS  Journal of Vacuum Science and Technology Recognizes  Dr. Kaupo Kukli 
as One of its Most Valuable Reviewers (MVR)
 
Here are recent JVST articles coauthored by Dr. Kaupo Kukli, University of Helsinki, available free for download during the next 30 days:
Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer depositionAile Tamm, Jekaterina Kozlova, Lauri Aarik, Jaan Aarik, Kaupo Kukli, Joosep Link and Raivo Stern
J. Vac. Sci. Technol. A 33, 01A127 (2015) |  Read More

Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3-based metal-insulator-metal capacitors grown by atomic layer depositionH. García, H. Castán, A. Gómez, S. Dueñas, L. Bailón, K. Kukli, M. Kariniemi, M. Kemell, J. Niinistö, M. Ritala and M. Leskelä
J. Vac. Sci. Technol. B 29, 01AC04 (2011) |  Read More
Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer depositionKaupo Kukli, Jaakko Niinistö, Aile Tamm, Mikko Ritala and Markku Leskelä
J. Vac. Sci. Technol. B 27, 226 (2009) | Read More 

Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectricsH. García, S. Dueñas, H. Castán, A. Gómez, L. Bailón, R. Barquero, K. Kukli, M. Ritala and M. Leskelä
J. Vac. Sci. Technol. B 27, 416 (2009) |  Read More
Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
S. Dueñas, H. Castán, H. Garcia, A. Gómez, L. Bailón, K. Kukli, J. Niinistö, M. Ritala and M. LeskeläJ. Vac. Sci. Technol. B 27, 389 (2009) | Read More

Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2OKaupo Kukli, Mikko Ritala, Markku Leskelä and Janne Jokinen
J. Vac. Sci. Technol. A 15, 2214 (1997) | Read More