Friday, April 11, 2014

Open Access Materials Journal "High-k Matrerials and Devices 2014 special issue

Advanced gate stacks with high dielectric constant materials (high-k) for complementary metal-oxide-semiconductor (CMOS) and memory applications in sub-22 nm feature size integrated circuits have been a subject of intense research in recent years. The main focus of the forthcoming special issue is to present a comprehensive overview to our readers by assembling state-of-the-art research articles and reviews on processing and characterization of high-k gate material. The topics covered by this special issue include high-k materials and deposition methods; Deposition on high-mobility substrate such as Ge, GaAs, and other III-V compounds; Interface passivation of substrate/high-k interface; Reliability of high-k material; Characterization techniques and Application to non-volatile memory systems.

Prof. Dr. Durga Misra
Guest Editor

Articles are continiously being added: http://www.mdpi.com/journal/materials/special_issues/materials-devices

Materials 2014, 7(4), 2913-2944; doi:10.3390/ma7042913 (doi registration under processing)
Received: 27 January 2014; in revised form: 14 March 2014 / Accepted: 24 March 2014 / Published: 10 April 2014
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Materials 2014, 7(4), 2669-2696; doi:10.3390/ma7042669
Received: 13 January 2014; in revised form: 19 March 2014 / Accepted: 25 March 2014 / Published: 31 March 2014
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Materials 2014, 7(3), 2301-2339; doi:10.3390/ma7032301
Received: 18 January 2014; in revised form: 6 March 2014 / Accepted: 7 March 2014 / Published: 19 March 2014
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Materials 2014, 7(3), 2155-2182; doi:10.3390/ma7032155
Received: 18 January 2014; in revised form: 13 February 2014 / Accepted: 14 February 2014 / Published: 13 March 2014
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